Spectroscopic characterization of thin SiC films

Dimitrov, DB; Papadimitriou, D; Beshkov, G

dc.contributor.author	Dimitrov, DB	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Beshkov, G	en
dc.date.accessioned	2014-03-01T01:15:12Z
dc.date.available	2014-03-01T01:15:12Z
dc.date.issued	1999	en
dc.identifier.issn	0925-9635	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13379
dc.subject	Electrical properties	en
dc.subject	Photoluminescence	en
dc.subject	Porous Si	en
dc.subject	Raman spectroscopy	en
dc.subject	RTA	en
dc.subject	SiC films	en
dc.subject	Structure	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.other	POROUS-SILICON	en
dc.subject.other	RAMAN-SPECTROSCOPY	en
dc.subject.other	ROOM-TEMPERATURE	en
dc.subject.other	CARBON-FILMS	en
dc.subject.other	DIAMOND	en
dc.subject.other	PHOTOLUMINESCENCE	en
dc.subject.other	DEPOSITION	en
dc.subject.other	SURFACES	en
dc.subject.other	KINETICS	en
dc.subject.other	WAFERS	en
dc.title	Spectroscopic characterization of thin SiC films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0925-9635(99)00107-7	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0925-9635(99)00107-7	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	The electrical, structural and optical properties of thin SiC films were investigated. A new approach based on high temperature annealing of layered carbon-silicon structures was used for the formation of the films. The SiC films were prepared by deposition of 30 nm thick carbon films on crystalline silicon (c-Si) and on porous silicon layers grown on c-Si. The layers were annealed to temperatures between 800 and 1400 degrees C for different annealing times ranging between 15 and 180 s. The structure of the resulting SiC films was analyzed by Raman spectroscopy. The Raman spectra of as-deposited films consist of two broad bands at 1350 and 1580 cm(-1) characteristic of the presence of amorphous carbon. These bands were shifted to lower frequencies in the spectra of annealed layers and were assigned to the hexagonal and cubic SiC phases. The photoluminescence spectra of the studied layers show a broad band at 550 nm. The most intense photoluminescence was observed from non-annealed porous silicon layers covered with thin carbon films. A degradation of the luminescence and a simultaneous increase of the conductivity of the layers with increasing annealing temperature and/or duration of annealing was observed. This behavior strongly suggests the creation of defect states which determine the conductivity of the layers and at the same time act as non-radiative centers. The increase of defect states was explained as originating from the dehydrogenation of the silicon carbide layers by annealing. (C) 1999 Elsevier Science S.A. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Diamond and Related Materials	en
dc.identifier.doi	10.1016/S0925-9635(99)00107-7	en
dc.identifier.isi	ISI:000080817600026	en
dc.identifier.volume	8	en
dc.identifier.issue	6	en
dc.identifier.spage	1148	en
dc.identifier.epage	1151	en