Stability of amorphous Se/Se100-xTex multilayers: A Raman study

Nesheva, D; Kotsalas, IP; Raptis, C; Arsova, D

dc.contributor.author	Nesheva, D	en
dc.contributor.author	Kotsalas, IP	en
dc.contributor.author	Raptis, C	en
dc.contributor.author	Arsova, D	en
dc.date.accessioned	2014-03-01T01:15:13Z
dc.date.available	2014-03-01T01:15:13Z
dc.date.issued	1999	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13382
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0000111188&partnerID=40&md5=c4b680ebcf8b58f74417295af2cf1616	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	SELENIUM FILMS	en
dc.subject.other	PHOTOCRYSTALLIZATION	en
dc.title	Stability of amorphous Se/Se100-xTex multilayers: A Raman study	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	The Raman spectra of amorphous Se/Se100-xTex multilayers (AMLs) of various compositions and sublayer thicknesses have been measured at room and low temperature (38 K) with the aim to assess the thermal and absorption effects of laser illumination on the structural stability of the AMLs. Under thermal treatment at room temperature (mediated by increasing gradually the power of the probing laser line), the AML stability (manifested by the rate of Se crystallization) increases with decreasing Se100-xTex sublayer thickness and with decreasing Te content. However, in single layers (2 mu m thickness) of Se100-xTex, we have observed the opposite effect, that is, the stability of single layers increases with increasing Te content. This apparent contradiction is explained in terms of thermodynamic energy considerations stated previously [K. Tanaka , Mater. Res. Soc. Symp. Proc. 118, 343 (1988)] and of a higher crystallization temperature of Se sublayers in the AMLs than that of bulk Se of the single layer. In order to eliminate (or, at least, reduce considerably) the thermal effects of laser illumination and study the photoinduced structural changes (due to absorption) in Se/Se100-xTex AMLs, low temperature (38 K) measurements were carried out using the 530.9 nm Kr+ laser line which is strongly absorbed by these AMLs. The rate of photoinduced crystallization increases with increasing Te content, which means that their stability to photoinduced changes is (again) higher, the lower the Te content. This is in agreement with previous results concerning three-dimensional Se100-xTex alloys, implying that the dimensionality change (from 3 in the alloys to 2 in the AMLs) does not affect significantly the Se-Se and Se-Te bond energies. (C) 1999 American Institute of Physics. [S0021-8979(99)05821-1].	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.isi	ISI:000083189100037	en
dc.identifier.volume	86	en
dc.identifier.issue	9	en
dc.identifier.spage	4964	en
dc.identifier.epage	4970	en