Strain characterization of polycrystalline diamond and silicon systems

Anastassakis, E

dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T01:15:13Z
dc.date.available	2014-03-01T01:15:13Z
dc.date.issued	1999	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/13390
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0001319026&partnerID=40&md5=1829791713938be7ec0afe3290ed3287	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	CHEMICAL-VAPOR-DEPOSITION	en
dc.subject.other	RAMAN-SPECTROSCOPY	en
dc.subject.other	THIN-FILMS	en
dc.subject.other	STRESS	en
dc.subject.other	SPECTRA	en
dc.subject.other	PHONON	en
dc.title	Strain characterization of polycrystalline diamond and silicon systems	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	The phonon deformation potentials of polycrystalline diamond and silicon, derived through the Voigt-Reuss-Hill averaging technique, are used to establish the systematics of strain characterization of polycrystalline films, considering all possible stress configurations. The results are compared to Raman data from the literature. (C) 1999 American Institute of Physics. [S0021-8979(99)02913-8].	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.isi	ISI:000080856300025	en
dc.identifier.volume	86	en
dc.identifier.issue	1	en
dc.identifier.spage	249	en
dc.identifier.epage	258	en