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Temperature and pressure dependence of Raman scattering in amorphous GeS2

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dc.contributor.author Perakis, A en
dc.contributor.author Kotsalas, IP en
dc.contributor.author Pavlatou, EA en
dc.contributor.author Raptis, C en
dc.date.accessioned 2014-03-01T01:15:17Z
dc.date.available 2014-03-01T01:15:17Z
dc.date.issued 1999 en
dc.identifier.issn 0370-1972 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/13409
dc.subject Raman Scattering en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other GERMANIUM DICHALCOGENIDES en
dc.subject.other SPECTRA en
dc.subject.other GLASSES en
dc.title Temperature and pressure dependence of Raman scattering in amorphous GeS2 en
heal.type journalArticle en
heal.identifier.primary 10.1002/(SICI)1521-3951(199901)211:1<421::AID-PSSB421>3.0.CO;2-F en
heal.identifier.secondary http://dx.doi.org/10.1002/(SICI)1521-3951(199901)211:1<421::AID-PSSB421>3.0.CO;2-F en
heal.language English en
heal.publicationDate 1999 en
heal.abstract The evolution of the Raman spectrum of amorphous GeS2 is reported over wide temperature (300 to 1075 K) and pressure (0 to 10.8 GPa) ranges. The temperature dependence shows that a-GeS2 turns gradually crystalline above T-g, first to the SD-phase and then to the layered (2D)-phase, with the latter one being retained up to the melting point and upon normal cooling to 300 K. The evolution of the A(1)(c) companion band of a-GeS2 into the crystalline phases indicates that this band is due to the symmetric stretch of S atoms in bridges of edge-sharing Ge(S-1/2)(4) tetrahedra. The Raman bands of a-GeS2 harden with increasing pressure, indicating a continuous decrease of the Ge-S bond length, while the material remains amorphous throughout the pressure range. Above 10 GPa, the material becomes almost opaque, thus making difficult the observation of Raman scattering. All these pressure induced effects are reversible after bringing the sample to ambient pressure. en
heal.publisher WILEY-V C H VERLAG GMBH en
heal.journalName Physica Status Solidi (B) Basic Research en
dc.identifier.doi 10.1002/(SICI)1521-3951(199901)211:1<421::AID-PSSB421>3.0.CO;2-F en
dc.identifier.isi ISI:000078185000063 en
dc.identifier.volume 211 en
dc.identifier.issue 1 en
dc.identifier.spage 421 en
dc.identifier.epage 427 en


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