Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry

Kokkoris, M; Kossionides, S; Vlastou, R; Aslanoglou, XA; Grotzschel, R; Nsouli, B; Kuznetsov, A; Petrovic, S; Paradellis, Th

dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Kossionides, S	en
dc.contributor.author	Vlastou, R	en
dc.contributor.author	Aslanoglou, XA	en
dc.contributor.author	Grotzschel, R	en
dc.contributor.author	Nsouli, B	en
dc.contributor.author	Kuznetsov, A	en
dc.contributor.author	Petrovic, S	en
dc.contributor.author	Paradellis, Th	en
dc.date.accessioned	2014-03-01T01:16:23Z
dc.date.available	2014-03-01T01:16:23Z
dc.date.issued	2001	en
dc.identifier.issn	0168-583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14023
dc.subject	Backscattering	en
dc.subject	Channeling	en
dc.subject	Nuclear resonance	en
dc.subject	Polytype	en
dc.subject	Protons	en
dc.subject	SiC crystal	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.classification	Nuclear Science & Technology	en
dc.subject.classification	Physics, Atomic, Molecular & Chemical	en
dc.subject.classification	Physics, Nuclear	en
dc.subject.other	Backscattering	en
dc.subject.other	Crystallography	en
dc.subject.other	Deposition	en
dc.subject.other	Polycrystals	en
dc.subject.other	Silicon carbide	en
dc.subject.other	Spectrum analysis	en
dc.subject.other	Thin films	en
dc.subject.other	Proton channeling	en
dc.subject.other	Protons	en
dc.title	Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0168-583X(01)00727-3	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0168-583X(01)00727-3	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely 4H, 6H, 15R, 21R) in the energy region E-p = 1.7-2.5 MeV, in the backscattering geometry, were taken and analyzed. Computer simulations based on the assumption that the dechanneling of protons follows an exponential law are in very good agreement with the measured spectra. The obtained results for the two crucial channeling parameters, gimel, the mean channeling distance, and, alpha, the ratio of the stopping powers in the aligned and random mode are compared for the different structures and an attempt is made to explain the occurring similarities as well as the differences, in order to evaluate the use of SiC polytypes as substrates in implantations and thin film depositions. An attempt is also made to correlate the results from the present work to the ones obtained in the past for simpler crystallographic structures, namely Si(100) and Si(111), as well as more complex ones, such as SiO2 (c-axis). (C) 2001 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/S0168-583X(01)00727-3	en
dc.identifier.isi	ISI:000171929600003	en
dc.identifier.volume	184	en
dc.identifier.issue	3	en
dc.identifier.spage	319	en
dc.identifier.epage	326	en