Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure

Hastas, NA; Dimitriadis, CA; Tassis, DH; Panayiotatos, Y; Logothetidis, S; Papadimitriou, D

dc.contributor.author	Hastas, NA	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Tassis, DH	en
dc.contributor.author	Panayiotatos, Y	en
dc.contributor.author	Logothetidis, S	en
dc.contributor.author	Papadimitriou, D	en
dc.date.accessioned	2014-03-01T01:16:33Z
dc.date.available	2014-03-01T01:16:33Z
dc.date.issued	2001	en
dc.identifier.issn	00036951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14075
dc.title	Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1419044	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1419044	en
heal.publicationDate	2001	en
heal.abstract	The electrical properties of thick amorphous carbon (a-C) films with sequential sp3-rich/sp2-rich layered structure, grown by magnetron sputtering on Si substrates at room temperature, were investigated. At low electric fields, the conduction is due to the variable range hopping mechanism. At high electric fields, thermally assisted band-to-band indirect tunneling is the dominant conduction mechanism, while the Arrhenius plots of the current show a deviation from straight lines in the form of continuous bending satisfying the Meyer-Nelder rule. Comparative studies of low-frequency noise in sp2-rich single layer and sp3-rich/sp2-rich layered a-C films indicate that the noise in the a-C layered originates from traps located mainly at the interfaces of the sp3-rich/ sp2-rich bilayers. © 2001 American Institute of Physics.	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.1419044	en
dc.identifier.volume	79	en
dc.identifier.issue	20	en
dc.identifier.spage	3269	en
dc.identifier.epage	3271	en