dc.contributor.author |
Astropekakis, A |
en |
dc.contributor.author |
Power, JR |
en |
dc.contributor.author |
Fleischer, K |
en |
dc.contributor.author |
Esser, N |
en |
dc.contributor.author |
Galata, S |
en |
dc.contributor.author |
Papadimitriou, D |
en |
dc.contributor.author |
Richter, W |
en |
dc.date.accessioned |
2014-03-01T01:16:39Z |
|
dc.date.available |
2014-03-01T01:16:39Z |
|
dc.date.issued |
2001 |
en |
dc.identifier.issn |
0163-1829 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/14144 |
|
dc.subject |
Single Domain |
en |
dc.subject.classification |
Physics, Condensed Matter |
en |
dc.subject.other |
REFLECTANCE DIFFERENCE SPECTROSCOPY |
en |
dc.subject.other |
MOLECULAR-BEAM EPITAXY |
en |
dc.subject.other |
VICINAL SI(001) |
en |
dc.subject.other |
SI(100) SURFACE |
en |
dc.subject.other |
GROWTH |
en |
dc.subject.other |
SI(111) |
en |
dc.subject.other |
SYSTEM |
en |
dc.subject.other |
RECONSTRUCTION |
en |
dc.subject.other |
ORIENTATION |
en |
dc.subject.other |
MORPHOLOGY |
en |
dc.title |
Influence of Sn on the optical anisotropy of single-domain Si(001) |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1103/PhysRevB.63.085317 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1103/PhysRevB.63.085317 |
en |
heal.identifier.secondary |
085317 |
en |
heal.language |
English |
en |
heal.publicationDate |
2001 |
en |
heal.abstract |
We apply reflectance anisotropy spectroscopy (RAS) and low-energy electron diffraction (LEED) to the study of Sn deposited on a single-domain vicinal Si(001) sample. Large variations in RAS are recorded when up to 5 monolayers (ML) of Sn is deposited on the Si substrate at room temperature. We observe (2 x 2) and (1 x 1) LEED patterns for the 0.5-ML and 1.0-ML Sn covered surfaces, respectively. The (1 x 1) LEED pattern exists beyond this coverage and up to 5.0-ML deposition. Even though a(1 x 1) LEED pattern is observed upon deposition of 1.5 ML. surprisingly, a significant optical anisotropy is observed. After annealing to 570 degreesC for 2 min, we observe a progression of LEED pattern changes from c(4 x 4)-->(6 x 2)-->(8 x 4) --> (5 x 1) with increased Sn coverage up to 1.5 ML. Similar RAS line shapes are obtained for all reconstructions produced through annealing with the exception of the (5 x 1). For the (5 x 1) phase, a significant anisotropy appears in the region of 1.8 eV. Similarities in the RAS line, shape for both the (5 x 1) phase and that obtained after deposition of 1.5 ML of Sn at room temperature may indicate a RAS sensitivity to Sn dimer orientation within the uppermost layer. |
en |
heal.publisher |
AMERICAN PHYSICAL SOC |
en |
heal.journalName |
PHYSICAL REVIEW B |
en |
dc.identifier.doi |
10.1103/PhysRevB.63.085317 |
en |
dc.identifier.isi |
ISI:000167203500060 |
en |
dc.identifier.volume |
6308 |
en |
dc.identifier.issue |
8 |
en |