Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena

Budzulyak, SI; Gorin, AE; Ermakov, VM; Kolomoets, VV; Venger, EF; Verma, P; Yamada, M; Liarokapis, E; Tunstall, DP

dc.contributor.author	Budzulyak, SI	en
dc.contributor.author	Gorin, AE	en
dc.contributor.author	Ermakov, VM	en
dc.contributor.author	Kolomoets, VV	en
dc.contributor.author	Venger, EF	en
dc.contributor.author	Verma, P	en
dc.contributor.author	Yamada, M	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Tunstall, DP	en
dc.date.accessioned	2014-03-01T01:17:08Z
dc.date.available	2014-03-01T01:17:08Z
dc.date.issued	2001	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14372
dc.subject	Transport Phenomena	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	METAL-INSULATOR-TRANSITION	en
dc.title	Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/1521-3951(200101)223:2<519::AID-PSSB519>3.0.CO;2-I	en
heal.identifier.secondary	http://dx.doi.org/10.1002/1521-3951(200101)223:2<519::AID-PSSB519>3.0.CO;2-I	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	The analysis of experimental data on the pressure and temperature dependences of conductivity, the current-voltage characteristics (IVC), and the pressure dependence of the activation energy in n-Si and n-Ge crystals in the region of strain-induced metal-insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal-nonmetal transition.	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (B) Basic Research	en
dc.identifier.doi	10.1002/1521-3951(200101)223:2<519::AID-PSSB519>3.0.CO;2-I	en
dc.identifier.isi	ISI:000166961300028	en
dc.identifier.volume	223	en
dc.identifier.issue	2	en
dc.identifier.spage	519	en
dc.identifier.epage	523	en