Structural properties of ZnSe epilayers on (111) GaAs

Kontos, AG; Chrysanthakopoulos, N; Calamiotou, M; Kehagias, T; Komninou, P; Pohl, UW

dc.contributor.author	Kontos, AG	en
dc.contributor.author	Chrysanthakopoulos, N	en
dc.contributor.author	Calamiotou, M	en
dc.contributor.author	Kehagias, T	en
dc.contributor.author	Komninou, P	en
dc.contributor.author	Pohl, UW	en
dc.date.accessioned	2014-03-01T01:17:09Z
dc.date.available	2014-03-01T01:17:09Z
dc.date.issued	2001	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14375
dc.subject.classification	Physics, Applied	en
dc.subject.other	MOLECULAR-BEAM EPITAXY	en
dc.subject.other	X-RAY-DIFFRACTION	en
dc.subject.other	PIEZOELECTRIC FIELDS	en
dc.subject.other	ZNSE(111) FILMS	en
dc.subject.other	HETEROSTRUCTURES	en
dc.subject.other	SUPERLATTICES	en
dc.subject.other	STRAINS	en
dc.title	Structural properties of ZnSe epilayers on (111) GaAs	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1398593	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1398593	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	Structural and optical studies of ZnSe epilayers, which were grown on the B side of (111)-oriented GaAs substrates, indicate the presence of tensile in-plane strains in the epilayers at room temperature. Electron microscopy observations showed that the ZnSe epilayer forms a coherent sharp interface with the GaAs substrate and consists of crystallites which are grown in epitaxial or twin orientation with respect to the substrate, having the (111) planes oriented parallel to the interface. In addition, embedded twins are observed within the epilayer. The twin boundaries are, generally, terminated by Shockley partial dislocations, which are expected to relax the compressive lattice mismatch strain. Plastic or thermal relaxation cannot account for sign and magnitude of the observed strains. Evidence is found that the observed tensile strains are piezoelectrically induced in a depletion layer, due to Fermi level pinning at the ZnSe/GaAs interface. (C) 2001 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.1398593	en
dc.identifier.isi	ISI:000171135900025	en
dc.identifier.volume	90	en
dc.identifier.issue	7	en
dc.identifier.spage	3301	en
dc.identifier.epage	3307	en