Structural Raman Studies of GexS1-x Chalcogenide Glasses

Kotsalas, IP; Raptis, C

dc.contributor.author	Kotsalas, IP	en
dc.contributor.author	Raptis, C	en
dc.date.accessioned	2014-03-01T01:17:09Z
dc.date.available	2014-03-01T01:17:09Z
dc.date.issued	2001	en
dc.identifier.issn	1454-4164	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14376
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0345816818&partnerID=40&md5=9468da3da65cf5f6f002b3e7df0c78fa	en
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0345816818&partnerID=40&md5=9468da3da65cf5f6f002b3e7df0c78fa	en
dc.relation.uri	http://inoe.inoe.ro/joam/arhiva/Pdf3_3/Kotsalas.pdf	en
dc.relation.uri	http://inoe.inoe.ro/JOAM/Pdf3_3/Kotsalas.pdf	en
dc.subject	Chalcogenide glasses	en
dc.subject	Crystallization	en
dc.subject	Phase transitions	en
dc.subject	Raman spectroscopy	en
dc.subject	Temperature and pressure dependence	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	GERMANIUM DICHALCOGENIDES	en
dc.subject.other	OPTICAL-ABSORPTION	en
dc.subject.other	GE	en
dc.subject.other	SPECTRA	en
dc.subject.other	FILMS	en
dc.subject.other	PHOTOLUMINESCENCE	en
dc.subject.other	SCATTERING	en
dc.subject.other	CRYSTALS	en
dc.subject.other	ORDER	en
dc.title	Structural Raman Studies of GexS1-x Chalcogenide Glasses	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	The Raman spectra of binary GexS1-x chalcogenide glasses have been measured for various compositions and discussed in terms of the structural units present. High temperature Raman measurements in GexSx-1 glasses have shown that, above the glass transition temperature T-g, irreversible two step crystallizations occur for the compound GeS2 (x=1/3) and the moderately rich in Ge (x=0.35) and S (x=0.30) glasses, but in the case of the strongly enriched in S (x=0.20) glass, a one step reversible crystallization takes place with the material returning to its starting glassy phase upon slow cooling to room temperature. The evolution of the A(1)(c) companion Raman band of GeS2 glass in the crystalline phases provides evidence (in support of predictions) that this controversial band is associated with symmetric stretching of S atoms in bridges of edge-sharing Ge-(S-1/2)(4) tetrahedra. Raman measurements above melting point have indicated the existence of tetrahedral units in the molten phase of these glasses. High pressure Raman measurements in GeS2 have shown that the bond lengths decrease substantially with pressure, while the material remains glassy throughout the pressure range of measurements (up to 10.8 GPa). It appears that all pressure induced effects are reversible after pressure relief.	en
heal.publisher	NATL INST OPTOELECTRONICS	en
heal.journalName	Journal of Optoelectronics and Advanced Materials	en
dc.identifier.isi	ISI:000171196000009	en
dc.identifier.volume	3	en
dc.identifier.issue	3	en
dc.identifier.spage	675	en
dc.identifier.epage	684	en