The effect of structural disorder on mechanical stress in a-Si:H films

Pantchev, B; Danesh, P; Savatinova, I; Liarokapis, E; Schmidt, B; Grambole, D

dc.contributor.author	Pantchev, B	en
dc.contributor.author	Danesh, P	en
dc.contributor.author	Savatinova, I	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Schmidt, B	en
dc.contributor.author	Grambole, D	en
dc.date.accessioned	2014-03-01T01:17:14Z
dc.date.available	2014-03-01T01:17:14Z
dc.date.issued	2001	en
dc.identifier.issn	0022-3727	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14410
dc.subject.classification	Physics, Applied	en
dc.subject.other	Amorphous silicon	en
dc.subject.other	Backscattering	en
dc.subject.other	Compressive stress	en
dc.subject.other	Ion implantation	en
dc.subject.other	Plasma enhanced chemical vapor deposition	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Raman backscattering spectroscopy	en
dc.subject.other	Thin films	en
dc.title	The effect of structural disorder on mechanical stress in a-Si:H films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0022-3727/34/17/303	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0022-3727/34/17/303	en
heal.language	English	en
heal.publicationDate	2001	en
heal.abstract	The effect of ion implantation on mechanical stress in a-Si:H films was studied with the aim of separating the contributions that the hydrogen content and structural defects make to the intrinsic compressive stress. The a-Si:H films were prepared by plasma-enhanced chemical vapour deposition. Silicon ions with an energy of 160 keV were implanted and the implantation-induced structural damage was studied by means of Raman backscattering spectroscopy. The stress in the films was compressive and its value correlated with the short and intermediate range orders. The results have shown that the value of compressive stress in the material could be lowered by changing the structural order of the silicon network without changing the hydrogen content.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics D: Applied Physics	en
dc.identifier.doi	10.1088/0022-3727/34/17/303	en
dc.identifier.isi	ISI:000171429400007	en
dc.identifier.volume	34	en
dc.identifier.issue	17	en
dc.identifier.spage	2589	en
dc.identifier.epage	2592	en