The effect of structural disorder on mechanical stress in a-Si:H films

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dc.contributor.author Pantchev, B en
dc.contributor.author Danesh, P en
dc.contributor.author Savatinova, I en
dc.contributor.author Liarokapis, E en
dc.contributor.author Schmidt, B en
dc.contributor.author Grambole, D en
dc.date.accessioned 2014-03-01T01:17:14Z
dc.date.available 2014-03-01T01:17:14Z
dc.date.issued 2001 en
dc.identifier.issn 0022-3727 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/14410
dc.subject.classification Physics, Applied en
dc.subject.other Amorphous silicon en
dc.subject.other Backscattering en
dc.subject.other Compressive stress en
dc.subject.other Ion implantation en
dc.subject.other Plasma enhanced chemical vapor deposition en
dc.subject.other Raman spectroscopy en
dc.subject.other Raman backscattering spectroscopy en
dc.subject.other Thin films en
dc.title The effect of structural disorder on mechanical stress in a-Si:H films en
heal.type journalArticle en
heal.identifier.primary 10.1088/0022-3727/34/17/303 en
heal.identifier.secondary http://dx.doi.org/10.1088/0022-3727/34/17/303 en
heal.language English en
heal.publicationDate 2001 en
heal.abstract The effect of ion implantation on mechanical stress in a-Si:H films was studied with the aim of separating the contributions that the hydrogen content and structural defects make to the intrinsic compressive stress. The a-Si:H films were prepared by plasma-enhanced chemical vapour deposition. Silicon ions with an energy of 160 keV were implanted and the implantation-induced structural damage was studied by means of Raman backscattering spectroscopy. The stress in the films was compressive and its value correlated with the short and intermediate range orders. The results have shown that the value of compressive stress in the material could be lowered by changing the structural order of the silicon network without changing the hydrogen content. en
heal.publisher IOP PUBLISHING LTD en
heal.journalName Journal of Physics D: Applied Physics en
dc.identifier.doi 10.1088/0022-3727/34/17/303 en
dc.identifier.isi ISI:000171429400007 en
dc.identifier.volume 34 en
dc.identifier.issue 17 en
dc.identifier.spage 2589 en
dc.identifier.epage 2592 en

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