A MMIC QPSK modulator

Tsenes, PS; Stratakos, GE; Nikolaos, S; Uzunoglu, K

dc.contributor.author	Tsenes, PS	en
dc.contributor.author	Stratakos, GE	en
dc.contributor.author	Nikolaos, S	en
dc.contributor.author	Uzunoglu, K	en
dc.date.accessioned	2014-03-01T01:17:21Z
dc.date.available	2014-03-01T01:17:21Z
dc.date.issued	2002	en
dc.identifier.issn	08827516	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14484
dc.subject.other	Bandwidth	en
dc.subject.other	Computer simulation	en
dc.subject.other	Integrated circuit layout	en
dc.subject.other	Mixer circuits	en
dc.subject.other	Modulators	en
dc.subject.other	Quadrature phase shift keying	en
dc.subject.other	Spurious signal noise	en
dc.subject.other	Carrier frequency	en
dc.subject.other	Gilbert cells	en
dc.subject.other	Monolithic microwave integrated circuits	en
dc.title	A MMIC QPSK modulator	en
heal.type	journalArticle	en
heal.identifier.primary	10.1080/08827510211280	en
heal.identifier.secondary	http://dx.doi.org/10.1080/08827510211280	en
heal.publicationDate	2002	en
heal.abstract	In this paper a MMIC QPSK modulator is described. The bit rate of the baseband signal is 155 Mbits/sec, while the frequency of the carrier is fLO = 10 GHz. The modulation is performed directly at the RF band and therefore an IF stage is not necessary. The design contains all the necessary sub-circuits except for the demultiplexer and the low-pass filters, which are used so that the bandwidth of the binary waves can be reduced. The mixers that are contained in the circuit are not the typical Gilbert cells and as a result they occupy a much smaller area (half). The circuit needs no external LO coupler and no RF chocks. The F-20 process of GEC Marconi was used for designing the modulator. The occupied area is approximately 12 mm2. Section 1 presents fundamentals on Quadriphase Shift Keying (QPSK), while in Section 2 the characteristics of the F-20 process are described. In the following Sections the sub-circuits, the complete circuit, and its simulated results are presented.	en
heal.journalName	Active and Passive Electronic Components	en
dc.identifier.doi	10.1080/08827510211280	en
dc.identifier.volume	25	en
dc.identifier.issue	1	en
dc.identifier.spage	47	en
dc.identifier.epage	70	en