Design and development of monolithic microwave integrated amplifiers and coupling circuits for telecommunication systems applications

Makri, R; Gargalakos, M; Uzunoglu, NK

dc.contributor.author	Makri, R	en
dc.contributor.author	Gargalakos, M	en
dc.contributor.author	Uzunoglu, NK	en
dc.date.accessioned	2014-03-01T01:17:41Z
dc.date.available	2014-03-01T01:17:41Z
dc.date.issued	2002	en
dc.identifier.issn	08827516	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14619
dc.subject	Design and Development	en
dc.subject.other	Capacitors	en
dc.subject.other	Computer aided design	en
dc.subject.other	Computer simulation	en
dc.subject.other	Coupled circuits	en
dc.subject.other	High electron mobility transistors	en
dc.subject.other	Integrated circuit layout	en
dc.subject.other	Mobile telecommunication systems	en
dc.subject.other	Power amplifiers	en
dc.subject.other	Radar systems	en
dc.subject.other	Remote sensing	en
dc.subject.other	Semiconductor device models	en
dc.subject.other	Wireless telecommunication systems	en
dc.subject.other	Low noise amplifiers	en
dc.subject.other	Monolithic microwave integrated amplifiers	en
dc.subject.other	Quadrature coupler	en
dc.subject.other	Shunt capacitors	en
dc.subject.other	Monolithic microwave integrated circuits	en
dc.title	Design and development of monolithic microwave integrated amplifiers and coupling circuits for telecommunication systems applications	en
heal.type	journalArticle	en
heal.identifier.primary	10.1080/08827510211275	en
heal.identifier.secondary	http://dx.doi.org/10.1080/08827510211275	en
heal.publicationDate	2002	en
heal.abstract	Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers to be used for mobile and wireless communications as well as remote sensing and radar applications. A medium power linear FET amplifier has been designed with combining techniques on a single chip. The circuit operates at 14.4-15.2 GHz with an input power of -15 dB m, a 36 dB total gain, while the input and output VSWR is less than 1.6. Due to high cost of MMIC fabrication only the first subunit was manufactured and tests verified the simulation results. Additionally, novel techniques have been used for the design of two coupling networks at 10 GHz in order to minimize the area occupied. A meander-kind design as well as shunt capacitors were implemented for a 90° quadrature coupler and a Wilkinson one in order to reduce size. Finally, a two stages low noise amplifier was designed with the use of H40 GaAs process in order the differences between the relevant designs to be explored. The key specifications for this MMIC LNA include operation at 10 GHz with a total gain of 17 dB while the noise figure is less than 1.5 dB.	en
heal.journalName	Active and Passive Electronic Components	en
dc.identifier.doi	10.1080/08827510211275	en
dc.identifier.volume	25	en
dc.identifier.issue	1	en
dc.identifier.spage	1	en
dc.identifier.epage	22	en