Electrical properties of crystalline Er and Dy silicide layers

Tsamakis, D; Vlachos, M; Travlos, A; Salamouras, N

dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Vlachos, M	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Salamouras, N	en
dc.date.accessioned	2014-03-01T01:17:47Z
dc.date.available	2014-03-01T01:17:47Z
dc.date.issued	2002	en
dc.identifier.issn	00406090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14667
dc.subject	Hall effect	en
dc.subject	Mobility	en
dc.subject	Molecular beam epitaxy	en
dc.subject	Rare earth silicides	en
dc.subject.other	Carrier concentration	en
dc.subject.other	Carrier mobility	en
dc.subject.other	Crystal structure	en
dc.subject.other	Dysprosium compounds	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Erbium compounds	en
dc.subject.other	Hall effect	en
dc.subject.other	Molecular beam epitaxy	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Substrates	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Transport properties	en
dc.subject.other	X ray diffraction analysis	en
dc.subject.other	Rare earth silicides	en
dc.subject.other	Crystalline materials	en
dc.title	Electrical properties of crystalline Er and Dy silicide layers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0040-6090(02)00621-1	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0040-6090(02)00621-1	en
heal.publicationDate	2002	en
heal.abstract	The electrical transport properties of crystalline Er and Dy silicide layers were investigated using the electrical resistivity and Hall measurements in the temperature range 77-350 K. The structure and morphology of the samples were examined by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The free carrier density and mobility showed a metallic behavior with carrier type dependent on the crystalline structure of the silicides. Both resistivity and Hall coefficients showed an anisotropy in the electronic properties near the Fermi level of the two crystalline phases of ErSi2-x.	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/S0040-6090(02)00621-1	en
dc.identifier.volume	418	en
dc.identifier.issue	2	en
dc.identifier.spage	211	en
dc.identifier.epage	214	en