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Electrical properties of crystalline Er and Dy silicide layers

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dc.contributor.author Tsamakis, D en
dc.contributor.author Vlachos, M en
dc.contributor.author Travlos, A en
dc.contributor.author Salamouras, N en
dc.date.accessioned 2014-03-01T01:17:47Z
dc.date.available 2014-03-01T01:17:47Z
dc.date.issued 2002 en
dc.identifier.issn 00406090 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/14667
dc.subject Hall effect en
dc.subject Mobility en
dc.subject Molecular beam epitaxy en
dc.subject Rare earth silicides en
dc.subject.other Carrier concentration en
dc.subject.other Carrier mobility en
dc.subject.other Crystal structure en
dc.subject.other Dysprosium compounds en
dc.subject.other Electric conductivity en
dc.subject.other Erbium compounds en
dc.subject.other Hall effect en
dc.subject.other Molecular beam epitaxy en
dc.subject.other Semiconducting silicon en
dc.subject.other Substrates en
dc.subject.other Transmission electron microscopy en
dc.subject.other Transport properties en
dc.subject.other X ray diffraction analysis en
dc.subject.other Rare earth silicides en
dc.subject.other Crystalline materials en
dc.title Electrical properties of crystalline Er and Dy silicide layers en
heal.type journalArticle en
heal.identifier.primary 10.1016/S0040-6090(02)00621-1 en
heal.identifier.secondary http://dx.doi.org/10.1016/S0040-6090(02)00621-1 en
heal.publicationDate 2002 en
heal.abstract The electrical transport properties of crystalline Er and Dy silicide layers were investigated using the electrical resistivity and Hall measurements in the temperature range 77-350 K. The structure and morphology of the samples were examined by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The free carrier density and mobility showed a metallic behavior with carrier type dependent on the crystalline structure of the silicides. Both resistivity and Hall coefficients showed an anisotropy in the electronic properties near the Fermi level of the two crystalline phases of ErSi2-x. en
heal.journalName Thin Solid Films en
dc.identifier.doi 10.1016/S0040-6090(02)00621-1 en
dc.identifier.volume 418 en
dc.identifier.issue 2 en
dc.identifier.spage 211 en
dc.identifier.epage 214 en


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