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Electrochemical formation of zinc selenide from acidic aqueous solutions

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dc.contributor.author Bouroushian, M en
dc.contributor.author Kosanovic, T en
dc.contributor.author Loizos, Z en
dc.contributor.author Spyrellis, N en
dc.date.accessioned 2014-03-01T01:17:48Z
dc.date.available 2014-03-01T01:17:48Z
dc.date.issued 2002 en
dc.identifier.issn 1432-8488 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/14669
dc.subject Binary compound semiconductor en
dc.subject Cathodic electrodeposition en
dc.subject Underpotential deposition en
dc.subject Voltammetry en
dc.subject Zinc selenide en
dc.subject.classification Electrochemistry en
dc.subject.other crystallin en
dc.subject.other nickel en
dc.subject.other titanium en
dc.subject.other unclassified drug en
dc.subject.other zinc derivative en
dc.subject.other zinc selenide en
dc.subject.other zinc sulfate en
dc.subject.other aqueous solution en
dc.subject.other article en
dc.subject.other crystal en
dc.subject.other electric potential en
dc.subject.other electrochemical analysis en
dc.subject.other electrode en
dc.subject.other film en
dc.subject.other potentiometry en
dc.subject.other stoichiometry en
dc.subject.other temperature sensitivity en
dc.subject.other thermodynamics en
dc.title Electrochemical formation of zinc selenide from acidic aqueous solutions en
heal.type journalArticle en
heal.identifier.primary 10.1007/s100080100215 en
heal.identifier.secondary http://dx.doi.org/10.1007/s100080100215 en
heal.language English en
heal.publicationDate 2002 en
heal.abstract An investigation on electrochemical ZnSe thin film growth from acidic aqueous baths of Se(IV) and Zn(II) species is described. The range of co-deposition potentials is predicted on a thermodynamic basis according to a known electrochemical model. A study on the voltammetric behavior of Ti and Ni electrode substrates in the working solutions at various temperatures provides the main features of the applied electrochemical process. Cathodic electrodeposition at high temperatures (> 65 degreesC) results in the formation of polycrystalline cubic, randomly oriented, ZnSe crystallites suffering, in general, from the presence of a crystalline Se phase in excess. Annealing of as-grown films adjusts the stoichiometry and leads to the production of semiconductive ZnSe with a band gap width of 2.7 eV. en
heal.publisher SPRINGER-VERLAG en
heal.journalName Journal of Solid State Electrochemistry en
dc.identifier.doi 10.1007/s100080100215 en
dc.identifier.isi ISI:000175886500009 en
dc.identifier.volume 6 en
dc.identifier.issue 4 en
dc.identifier.spage 272 en
dc.identifier.epage 278 en


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