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High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions

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dc.contributor.author Hastas, NA en
dc.contributor.author Dimitriadis, CA en
dc.contributor.author Panayiotatos, Y en
dc.contributor.author Tassis, DH en
dc.contributor.author Logothetidis, S en
dc.contributor.author Papadimitriou, D en
dc.contributor.author Roupakas, G en
dc.contributor.author Adamopoulos, G en
dc.date.accessioned 2014-03-01T01:17:57Z
dc.date.available 2014-03-01T01:17:57Z
dc.date.issued 2002 en
dc.identifier.issn 0268-1242 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/14725
dc.subject Amorphous Carbon en
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other Activation energy en
dc.subject.other Amorphous materials en
dc.subject.other Carbon en
dc.subject.other Electric conductivity en
dc.subject.other Electric fields en
dc.subject.other Magnetron sputtering en
dc.subject.other Raman spectroscopy en
dc.subject.other Semiconducting silicon en
dc.subject.other Temperature en
dc.subject.other Band-to-band tunneling en
dc.subject.other Low frequency noise measurement en
dc.subject.other Photoconductance measurements en
dc.subject.other Heterojunctions en
dc.title High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions en
heal.type journalArticle en
heal.identifier.primary 10.1088/0268-1242/17/7/304 en
heal.identifier.secondary http://dx.doi.org/10.1088/0268-1242/17/7/304 en
heal.language English en
heal.publicationDate 2002 en
heal.abstract The electrical conductivity of heterojunctions of amorphous carbon (a-C) films (25 and 75 nm thick) grown on silicon by magnetron sputtering has been studied as a function of the applied electric field and temperature. At low electric fields and high temperatures, the conductivity exhibits thermally activated ohmic behaviour with activation energy 0.14 eV. At high electric fields, photoconductance measurements indicate that the conductivity is primarily due to a field-activated mobility with its activation energy decreasing as the electric field increases. At very high electric fields, band-to-band tunnelling is the dominant conduction mechanism. The mobility field-activated conduction model indicates an energy distribution of trapping states consisting of two exponential distributions. The exponential distributions correspond to tail states arising from clustering of sp(2) sites and to deep states caused by isolated sp(2) sites. Low-frequency noise measurements show that thicker a-C films contain a higher concentration of the trapping states. This result was explained by an increase of the sp(2)/sp(3) bonding ratio found from the analysis of Raman spectroscopic measurements. en
heal.publisher IOP PUBLISHING LTD en
heal.journalName Semiconductor Science and Technology en
dc.identifier.doi 10.1088/0268-1242/17/7/304 en
dc.identifier.isi ISI:000177094900007 en
dc.identifier.volume 17 en
dc.identifier.issue 7 en
dc.identifier.spage 662 en
dc.identifier.epage 667 en


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