High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions

Hastas, NA; Dimitriadis, CA; Panayiotatos, Y; Tassis, DH; Logothetidis, S; Papadimitriou, D; Roupakas, G; Adamopoulos, G

dc.contributor.author	Hastas, NA	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Panayiotatos, Y	en
dc.contributor.author	Tassis, DH	en
dc.contributor.author	Logothetidis, S	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Roupakas, G	en
dc.contributor.author	Adamopoulos, G	en
dc.date.accessioned	2014-03-01T01:17:57Z
dc.date.available	2014-03-01T01:17:57Z
dc.date.issued	2002	en
dc.identifier.issn	0268-1242	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14725
dc.subject	Amorphous Carbon	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Activation energy	en
dc.subject.other	Amorphous materials	en
dc.subject.other	Carbon	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Electric fields	en
dc.subject.other	Magnetron sputtering	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Temperature	en
dc.subject.other	Band-to-band tunneling	en
dc.subject.other	Low frequency noise measurement	en
dc.subject.other	Photoconductance measurements	en
dc.subject.other	Heterojunctions	en
dc.title	High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0268-1242/17/7/304	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0268-1242/17/7/304	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	The electrical conductivity of heterojunctions of amorphous carbon (a-C) films (25 and 75 nm thick) grown on silicon by magnetron sputtering has been studied as a function of the applied electric field and temperature. At low electric fields and high temperatures, the conductivity exhibits thermally activated ohmic behaviour with activation energy 0.14 eV. At high electric fields, photoconductance measurements indicate that the conductivity is primarily due to a field-activated mobility with its activation energy decreasing as the electric field increases. At very high electric fields, band-to-band tunnelling is the dominant conduction mechanism. The mobility field-activated conduction model indicates an energy distribution of trapping states consisting of two exponential distributions. The exponential distributions correspond to tail states arising from clustering of sp(2) sites and to deep states caused by isolated sp(2) sites. Low-frequency noise measurements show that thicker a-C films contain a higher concentration of the trapping states. This result was explained by an increase of the sp(2)/sp(3) bonding ratio found from the analysis of Raman spectroscopic measurements.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Semiconductor Science and Technology	en
dc.identifier.doi	10.1088/0268-1242/17/7/304	en
dc.identifier.isi	ISI:000177094900007	en
dc.identifier.volume	17	en
dc.identifier.issue	7	en
dc.identifier.spage	662	en
dc.identifier.epage	667	en