MOSFET modeling and parameter extraction for low temperature analog circuit design

Martin, P; Bucher, M; Enz, C

dc.contributor.author	Martin, P	en
dc.contributor.author	Bucher, M	en
dc.contributor.author	Enz, C	en
dc.date.accessioned	2014-03-01T01:18:04Z
dc.date.available	2014-03-01T01:18:04Z
dc.date.issued	2002	en
dc.identifier.issn	1155-4339	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14782
dc.subject	Analog Circuits	en
dc.subject	Flicker Noise	en
dc.subject	Infrared Imaging	en
dc.subject	Low Frequency Noise	en
dc.subject	Low Temperature	en
dc.subject	Parameter Extraction	en
dc.subject	Threshold Voltage	en
dc.subject.classification	Physics, Multidisciplinary	en
dc.title	MOSFET modeling and parameter extraction for low temperature analog circuit design	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/WOLTE.2002.1022449	en
heal.identifier.secondary	http://dx.doi.org/10.1109/WOLTE.2002.1022449	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	SPICE parameters needed for simulation of CMOS readout circuits used in infrared image sensors cooled at low temperature are extracted using a specific MOSFET model based on the EKV 2.6 compact charge model. It is used below 200 K and is very well adapted to analog simulation in weak and moderate inversion regimes. It was successively applied on different CMOS processes from different foundries. The model's performance is demonstrated in this work for a 0.35 mum N+ single gate process. Experimental results on the evolution of the low frequency noise and the transistor matching parameters between 300 K and 77 K are also presented. Contrary to the NMOS transistors, the threshold voltage differences of buried channel PMOS transistors are less scattered as the temperature is lowered. The same trend with temperature is observed on the flicker noise parameter.	en
heal.publisher	E D P SCIENCES	en
heal.journalName	JOURNAL DE PHYSIQUE IV	en
dc.identifier.doi	10.1109/WOLTE.2002.1022449	en
dc.identifier.isi	ISI:000176971500011	en
dc.identifier.volume	12	en
dc.identifier.issue	PR3	en
dc.identifier.spage	51	en
dc.identifier.epage	56	en