Passive on-chip components for fully integrated silicon RF VCOs

Kyranas, A; Papananos, Y

dc.contributor.author	Kyranas, A	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T01:18:11Z
dc.date.available	2014-03-01T01:18:11Z
dc.date.issued	2002	en
dc.identifier.issn	08827516	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14852
dc.subject.other	Bipolar integrated circuits	en
dc.subject.other	Calculations	en
dc.subject.other	Capacitors	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Electric inductors	en
dc.subject.other	Equivalent circuits	en
dc.subject.other	Heterojunction bipolar transistors	en
dc.subject.other	Variable frequency oscillators	en
dc.subject.other	On-chip inductors	en
dc.subject.other	Parallel resonator quality factor	en
dc.subject.other	Variable capacitors	en
dc.subject.other	Passive networks	en
dc.title	Passive on-chip components for fully integrated silicon RF VCOs	en
heal.type	journalArticle	en
heal.identifier.primary	10.1080/08827510211281	en
heal.identifier.secondary	http://dx.doi.org/10.1080/08827510211281	en
heal.publicationDate	2002	en
heal.abstract	In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations. Design examples of passive devices operating at 5 and 6 GHz in a commercial HBT BiCMOS process are also presented. The parallel resonator quality factor is computed as a function of inductor L capacitor C and their respective losses RSL and RSC.	en
heal.journalName	Active and Passive Electronic Components	en
dc.identifier.doi	10.1080/08827510211281	en
dc.identifier.volume	25	en
dc.identifier.issue	1	en
dc.identifier.spage	83	en
dc.identifier.epage	95	en