Raman and photoluminescence study of magnetron sputtered amorphous carbon films

Papadimitriou, D; Roupakas, G; Xue, C; Topalidou, A; Panayiotatos, Y; Dimitriadis, CA; Logothetidis, S

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Roupakas, G	en
dc.contributor.author	Xue, C	en
dc.contributor.author	Topalidou, A	en
dc.contributor.author	Panayiotatos, Y	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Logothetidis, S	en
dc.date.accessioned	2014-03-01T01:18:16Z
dc.date.available	2014-03-01T01:18:16Z
dc.date.issued	2002	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14910
dc.subject	Amorphous materials	en
dc.subject	Carbon	en
dc.subject	Luminescence	en
dc.subject	Raman scattering	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Band structure	en
dc.subject.other	Carbon	en
dc.subject.other	Film growth	en
dc.subject.other	Magnetron sputtering	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Raman scattering	en
dc.subject.other	Raman bands	en
dc.subject.other	Amorphous films	en
dc.title	Raman and photoluminescence study of magnetron sputtered amorphous carbon films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0040-6090(02)00442-X	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0040-6090(02)00442-X	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	The structural and optical properties of amorphous carbon films, grown by r.f.-magnetron sputtering on silicon substrates, were studied by Raman and photoluminescence spectroscopy in dependence of the substrate bias voltage V-b. The intensity ratio I(D)l I(G) of the Raman bands of disordered graphite (D-band) and graphite (G-band) decreased significantly (a) by reversing bias from positive ( +10 V) to negative (-20 V) and (b) by reducing the negative bias from -200 to -120 V. The intensity ratio I(D)/I(G) exhibited an almost flat minimum in the bias-region from -120 to - 20 V which is indicative of an increase of the fraction of sp(3)-bonded material. In the same bias-range, photoluminescence emission at 2.2-2.5 eV appeared blue-shifted and more efficient. Changes in photoluminescence energy are attributed to increase of sp(3) content of the films becoming more transparent when deposited at substrate-bias between - 20 and - 120 V Increase of photoluminescence intensity is probably related to increased number of defects due to increasing structural disorder. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/S0040-6090(02)00442-X	en
dc.identifier.isi	ISI:000177418200004	en
dc.identifier.volume	414	en
dc.identifier.issue	1	en
dc.identifier.spage	18	en
dc.identifier.epage	24	en