Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films

Nesheva, D; Raptis, C; Perakis, A; Bineva, I; Aneva, Z; Levi, Z; Alexandrova, S; Hofmeister, H

dc.contributor.author	Nesheva, D	en
dc.contributor.author	Raptis, C	en
dc.contributor.author	Perakis, A	en
dc.contributor.author	Bineva, I	en
dc.contributor.author	Aneva, Z	en
dc.contributor.author	Levi, Z	en
dc.contributor.author	Alexandrova, S	en
dc.contributor.author	Hofmeister, H	en
dc.date.accessioned	2014-03-01T01:18:16Z
dc.date.available	2014-03-01T01:18:16Z
dc.date.issued	2002	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14911
dc.subject.classification	Physics, Applied	en
dc.subject.other	Amorphous silicon nanoparticles	en
dc.subject.other	Average size	en
dc.subject.other	Band-to-band recombination	en
dc.subject.other	Carrier recombination	en
dc.subject.other	Crystalline nanoparticles	en
dc.subject.other	Defect state	en
dc.subject.other	Film composition	en
dc.subject.other	High density	en
dc.subject.other	In-vacuum	en
dc.subject.other	Long time stabilities	en
dc.subject.other	Post deposition annealing	en
dc.subject.other	Raman Scattering measurements	en
dc.subject.other	Residual pressures	en
dc.subject.other	Si nanocrystal	en
dc.subject.other	Si nanoparticles	en
dc.subject.other	Silicon monoxide	en
dc.subject.other	Silicon rich silicon oxides	en
dc.subject.other	High resolution electron microscopy	en
dc.subject.other	Nanocrystals	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Raman scattering	en
dc.subject.other	Silicon	en
dc.subject.other	Silicon oxides	en
dc.subject.other	Thermal evaporation	en
dc.subject.other	Thin films	en
dc.subject.other	Annealing	en
dc.title	Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1504176	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1504176	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	Silicon-rich silicon oxide thin films have been prepared by thermal evaporation of silicon monoxide in vacuum. The SiOx film composition (1.1less than or equal to x less than or equal to1.7) has been controlled by varying the deposition rate and residual pressure in the chamber. Long time stability of all films has been ensured by a postdeposition annealing at 523 K for 30 min in Ar atmosphere. Some films were further annealed at 973 K and some others at 1303 K. Raman scattering measurements have implied the formation of amorphous silicon nanoparticles in films annealed at 973 K and Si nanocrystals in films annealed at 1303 K. The latter conclusion is strongly supported by high resolution electron microscopy studies which show a high density of Si nanocrystals in these films. Photoluminescence has been observed from both amorphous and crystalline nanoparticles and interpreted in terms of band-to-band recombination in the nanoparticles having average size greater than 2.5 nm and carrier recombination through defect states in smaller nanoparticles. (C) 2002 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.1504176	en
dc.identifier.isi	ISI:000178318000074	en
dc.identifier.volume	92	en
dc.identifier.issue	8	en
dc.identifier.spage	4678	en
dc.identifier.epage	4683	en