Raman scattering and photoluminescence of nitrogenated amorphous carbon films

Papadimitriou, D; Roupakas, G; Dimitriadis, CA; Logothetidis, S

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Roupakas, G	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Logothetidis, S	en
dc.date.accessioned	2014-03-01T01:18:17Z
dc.date.available	2014-03-01T01:18:17Z
dc.date.issued	2002	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14912
dc.subject.classification	Physics, Applied	en
dc.subject.other	Amorphous matrices	en
dc.subject.other	Carrier gas	en
dc.subject.other	G-band frequencies	en
dc.subject.other	Intensity ratio	en
dc.subject.other	Negative V	en
dc.subject.other	Nitrogen concentrations	en
dc.subject.other	Nitrogenated amorphous carbon films	en
dc.subject.other	Photoluminescence emission	en
dc.subject.other	Positive bias	en
dc.subject.other	Pure nitrogen atmosphere	en
dc.subject.other	Raman bands	en
dc.subject.other	rf-Magnetron sputtering	en
dc.subject.other	Sample storage	en
dc.subject.other	Silicon substrates	en
dc.subject.other	Spectral characteristics	en
dc.subject.other	Structural and optical properties	en
dc.subject.other	Structural change	en
dc.subject.other	Substrate bias	en
dc.subject.other	Substrate bias voltages	en
dc.subject.other	Graphite	en
dc.subject.other	Optical properties	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Photoluminescence spectroscopy	en
dc.subject.other	Raman scattering	en
dc.subject.other	Nitrogen	en
dc.title	Raman scattering and photoluminescence of nitrogenated amorphous carbon films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1488251	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1488251	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	The structural and optical properties of nitrogenated amorphous carbon films, grown by rf-magnetron sputtering on silicon substrates, were studied by Raman and photoluminescence (PL) spectroscopy as a function of the nitrogen concentration and the substrate bias voltage V-b. For films deposited with V-b=10 V, the photoluminescence emission was most intense at nitrogen concentrations in the carrier gas of 25% (75% Ar), while the intensity ratio I(D)/I(G) of the Raman bands of disordered graphite (D band) and graphite (G band) partially substituted by nitrogen exhibited a minimum simultaneously observed with a minimum of G-band frequency and a maximum of G-band width. Changes in spectral characteristics of Raman scattering at a concentration of 25% (congruent to30 at %) are indicative of an increase of sp(3)-bonded fraction and disorder. PL-enhancement coincides, in this case, with structural changes and is probably correlated to the substitution of nitrogen in the tetrahedraly bonded amorphous matrix. In the case of films deposited in a pure nitrogen atmosphere, N-2=100%, no significant PL-intensity changes appeared to exist between films deposited at low positive (10 V) and highly negative (-200 V) substrate bias. After several months of sample storage in air, samples grown at negative V-b were found to preserve their structural and optical properties, while films grown at positive bias (V-b=10) and nitrogen concentrations in the carrier gas above 70% (congruent to40 at %) delaminated. (C) 2002 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.1488251	en
dc.identifier.isi	ISI:000176600000032	en
dc.identifier.volume	92	en
dc.identifier.issue	2	en
dc.identifier.spage	870	en
dc.identifier.epage	875	en