X-band MMIC active mixers

DSpace/Manakin Repository

Show simple item record

dc.contributor.author Tsenes, PS en
dc.contributor.author Stratakos, GE en
dc.contributor.author Uzunoglu, NK en
dc.date.accessioned 2014-03-01T01:18:29Z
dc.date.available 2014-03-01T01:18:29Z
dc.date.issued 2002 en
dc.identifier.issn 08827516 en
dc.identifier.uri http://hdl.handle.net/123456789/15040
dc.subject.other Computer simulation en
dc.subject.other Frequency converter circuits en
dc.subject.other High electron mobility transistors en
dc.subject.other Integrated circuit layout en
dc.subject.other Mixer circuits en
dc.subject.other Down converter en
dc.subject.other Gilbert cell en
dc.subject.other Mixer theory en
dc.subject.other Monolithic microwave integrated circuits en
dc.title X-band MMIC active mixers en
heal.type journalArticle en
heal.identifier.primary 10.1080/08827510211277 en
heal.identifier.secondary http://dx.doi.org/10.1080/08827510211277 en
heal.publicationDate 2002 en
heal.abstract In this paper two active MMIC mixers for RF front-end applications are described. A down-converter that converts an RF signal (fRF = 10.45 GHz) into an IF signal (fIF = 0.95 GHz) using an LO signal fLO = 9.5 GHz and an up-converter that performs the opposite process have been fabricated. The down-converter is designed using the topology of a dual-gate pHEMT, while the up-converter is implemented in the form of a double balanced mixer using the topology of the Gilbert cell and the occupied areas are approximately 0.78 mm2 and 3.86 mm2, respectively. Both mixers present conversion gain, very low input and output return losses, very good isolation between all of their ports and the required LO power is quite low, while the up-converter contains on chip, except for the dc-bias and matching sub-circuits, the required LO and RF baluns. Both circuits have been fabricated using the H-40 process of GEC-Marconi. Section 1 presents fundamentals on mixer theory and mixer design while in Section 2 the characteristics of H-40 process are described. In Section 3 and in Section 4 the designing, the simulated and the measured results of the down-converter and the up-converter are presented, respectively. en
heal.journalName Active and Passive Electronic Components en
dc.identifier.doi 10.1080/08827510211277 en
dc.identifier.volume 25 en
dc.identifier.issue 1 en
dc.identifier.spage 23 en
dc.identifier.epage 46 en

Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record