X-band MMIC active mixers

Tsenes, PS; Stratakos, GE; Uzunoglu, NK

dc.contributor.author	Tsenes, PS	en
dc.contributor.author	Stratakos, GE	en
dc.contributor.author	Uzunoglu, NK	en
dc.date.accessioned	2014-03-01T01:18:29Z
dc.date.available	2014-03-01T01:18:29Z
dc.date.issued	2002	en
dc.identifier.issn	08827516	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15040
dc.subject.other	Computer simulation	en
dc.subject.other	Frequency converter circuits	en
dc.subject.other	High electron mobility transistors	en
dc.subject.other	Integrated circuit layout	en
dc.subject.other	Mixer circuits	en
dc.subject.other	Down converter	en
dc.subject.other	Gilbert cell	en
dc.subject.other	Mixer theory	en
dc.subject.other	Monolithic microwave integrated circuits	en
dc.title	X-band MMIC active mixers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1080/08827510211277	en
heal.identifier.secondary	http://dx.doi.org/10.1080/08827510211277	en
heal.publicationDate	2002	en
heal.abstract	In this paper two active MMIC mixers for RF front-end applications are described. A down-converter that converts an RF signal (fRF = 10.45 GHz) into an IF signal (fIF = 0.95 GHz) using an LO signal fLO = 9.5 GHz and an up-converter that performs the opposite process have been fabricated. The down-converter is designed using the topology of a dual-gate pHEMT, while the up-converter is implemented in the form of a double balanced mixer using the topology of the Gilbert cell and the occupied areas are approximately 0.78 mm2 and 3.86 mm2, respectively. Both mixers present conversion gain, very low input and output return losses, very good isolation between all of their ports and the required LO power is quite low, while the up-converter contains on chip, except for the dc-bias and matching sub-circuits, the required LO and RF baluns. Both circuits have been fabricated using the H-40 process of GEC-Marconi. Section 1 presents fundamentals on mixer theory and mixer design while in Section 2 the characteristics of H-40 process are described. In Section 3 and in Section 4 the designing, the simulated and the measured results of the down-converter and the up-converter are presented, respectively.	en
heal.journalName	Active and Passive Electronic Components	en
dc.identifier.doi	10.1080/08827510211277	en
dc.identifier.volume	25	en
dc.identifier.issue	1	en
dc.identifier.spage	23	en
dc.identifier.epage	46	en