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Compositional dependence of Raman scattering and photoluminescence emission in CuxGaySe2 thin films

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dc.contributor.author Xue, C en
dc.contributor.author Papadimitriou, D en
dc.contributor.author Raptis, YS en
dc.contributor.author Esser, N en
dc.contributor.author Richter, W en
dc.contributor.author Siebentritt, S en
dc.contributor.author Lux-Steiner, MCh en
dc.date.accessioned 2014-03-01T01:18:46Z
dc.date.available 2014-03-01T01:18:46Z
dc.date.issued 2003 en
dc.identifier.issn 0021-8979 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/15193
dc.subject.classification Physics, Applied en
dc.subject.other Copper compounds en
dc.subject.other Film growth en
dc.subject.other Gallium en
dc.subject.other Glass en
dc.subject.other Low temperature effects en
dc.subject.other Metallorganic chemical vapor deposition en
dc.subject.other Molybdenum en
dc.subject.other Photoluminescence en
dc.subject.other Physical vapor deposition en
dc.subject.other Raman scattering en
dc.subject.other Defect concentration en
dc.subject.other Thin films en
dc.title Compositional dependence of Raman scattering and photoluminescence emission in CuxGaySe2 thin films en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.1605813 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.1605813 en
heal.language English en
heal.publicationDate 2003 en
heal.abstract Raman scattering and photoluminescence (PL) emission of CuxGaySe2 thin films, grown by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) and by physical vapor deposition (PVD) on Glass/Mo substrates, were studied at room and low temperatures as a function of composition. Line width changes of Raman bands in the temperature range 20-300 K indicate the formation of a more disordered CuxGaySe2 phase with increasing Ga content. It is most likely that Raman bands observed at 193 and 199 cm-1 in the Ga-rich samples at low temperatures are associated with defect-related interface modes. The intensity increase of these bands and the photoluminescence intensity enhancement may be correlated to an increase in defect concentration in the Ga-rich phase. The radiative recombination in defect-rich Ga-rich samples with a higher degree of disorder apparently supports the PL emission. The observed changes are more pronounced in MOCVD than in PVD grown films. (C) 2003 American Institute of Physics. en
heal.publisher AMER INST PHYSICS en
heal.journalName Journal of Applied Physics en
dc.identifier.doi 10.1063/1.1605813 en
dc.identifier.isi ISI:000185420900018 en
dc.identifier.volume 94 en
dc.identifier.issue 7 en
dc.identifier.spage 4341 en
dc.identifier.epage 4347 en


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