Compositional dependence of Raman scattering and photoluminescence emission in CuxGaySe2 thin films

Xue, C; Papadimitriou, D; Raptis, YS; Esser, N; Richter, W; Siebentritt, S; Lux-Steiner, MCh

dc.contributor.author	Xue, C	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Esser, N	en
dc.contributor.author	Richter, W	en
dc.contributor.author	Siebentritt, S	en
dc.contributor.author	Lux-Steiner, MCh	en
dc.date.accessioned	2014-03-01T01:18:46Z
dc.date.available	2014-03-01T01:18:46Z
dc.date.issued	2003	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15193
dc.subject.classification	Physics, Applied	en
dc.subject.other	Copper compounds	en
dc.subject.other	Film growth	en
dc.subject.other	Gallium	en
dc.subject.other	Glass	en
dc.subject.other	Low temperature effects	en
dc.subject.other	Metallorganic chemical vapor deposition	en
dc.subject.other	Molybdenum	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Physical vapor deposition	en
dc.subject.other	Raman scattering	en
dc.subject.other	Defect concentration	en
dc.subject.other	Thin films	en
dc.title	Compositional dependence of Raman scattering and photoluminescence emission in CuxGaySe2 thin films	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1605813	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1605813	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	Raman scattering and photoluminescence (PL) emission of CuxGaySe2 thin films, grown by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) and by physical vapor deposition (PVD) on Glass/Mo substrates, were studied at room and low temperatures as a function of composition. Line width changes of Raman bands in the temperature range 20-300 K indicate the formation of a more disordered CuxGaySe2 phase with increasing Ga content. It is most likely that Raman bands observed at 193 and 199 cm-1 in the Ga-rich samples at low temperatures are associated with defect-related interface modes. The intensity increase of these bands and the photoluminescence intensity enhancement may be correlated to an increase in defect concentration in the Ga-rich phase. The radiative recombination in defect-rich Ga-rich samples with a higher degree of disorder apparently supports the PL emission. The observed changes are more pronounced in MOCVD than in PVD grown films. (C) 2003 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.1605813	en
dc.identifier.isi	ISI:000185420900018	en
dc.identifier.volume	94	en
dc.identifier.issue	7	en
dc.identifier.spage	4341	en
dc.identifier.epage	4347	en