Epitaxy and structural characterization of ZnSeTe layers grown on InP substrates

Kontos, AG; Raptis, YS; Strassburg, M; Pohl, UW

dc.contributor.author	Kontos, AG	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Strassburg, M	en
dc.contributor.author	Pohl, UW	en
dc.date.accessioned	2014-03-01T01:18:57Z
dc.date.available	2014-03-01T01:18:57Z
dc.date.issued	2003	en
dc.identifier.issn	0022-0248	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15279
dc.subject	A1. Characterization	en
dc.subject	A1. Raman	en
dc.subject	A1. Stresses	en
dc.subject	A1. X-ray diffraction	en
dc.subject	A3. Metalorganic vapor phase epitaxy	en
dc.subject	B1. Tellurites	en
dc.subject	B2. Semiconductor ternary compounds	en
dc.subject.classification	Crystallography	en
dc.subject.other	Crystal structure	en
dc.subject.other	Lattice constants	en
dc.subject.other	Raman scattering	en
dc.subject.other	Relaxation processes	en
dc.subject.other	Semiconducting indium phosphide	en
dc.subject.other	Semiconducting zinc compounds	en
dc.subject.other	Stoichiometry	en
dc.subject.other	Strain	en
dc.subject.other	Substrates	en
dc.subject.other	X ray diffraction analysis	en
dc.subject.other	Plastic strain	en
dc.subject.other	Epitaxial growth	en
dc.title	Epitaxy and structural characterization of ZnSeTe layers grown on InP substrates	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0022-0248(02)01904-8	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0022-0248(02)01904-8	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	ZnSeTe epilayers were grown on InP substrates with and without ZnCdSe buffer layers. Structural X-ray and Raman characterization results indicate a large range of Se composition in the epilayers. The introduction of a buffer layer and the control of the growth conditions improve the structure by limiting compositional variations close to the stoichiometric value where lattice matching conditions are met. Effects of plastic strain relaxation are thereby minimized. (C) 2002 Elsevier Science B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Journal of Crystal Growth	en
dc.identifier.doi	10.1016/S0022-0248(02)01904-8	en
dc.identifier.isi	ISI:000180078300003	en
dc.identifier.volume	247	en
dc.identifier.issue	1-2	en
dc.identifier.spage	17	en
dc.identifier.epage	22	en