dc.contributor.author |
Kolliopoulou, S |
en |
dc.contributor.author |
Dimitrakis, P |
en |
dc.contributor.author |
Normand, P |
en |
dc.contributor.author |
Zhang, H-L |
en |
dc.contributor.author |
Cant, N |
en |
dc.contributor.author |
Evans, SD |
en |
dc.contributor.author |
Paul, S |
en |
dc.contributor.author |
Pearson, C |
en |
dc.contributor.author |
Molloy, A |
en |
dc.contributor.author |
Petty, MC |
en |
dc.contributor.author |
Tsoukalas, D |
en |
dc.date.accessioned |
2014-03-01T01:19:01Z |
|
dc.date.available |
2014-03-01T01:19:01Z |
|
dc.date.issued |
2003 |
en |
dc.identifier.issn |
0021-8979 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/15332 |
|
dc.subject.classification |
Physics, Applied |
en |
dc.subject.other |
Electric potential |
en |
dc.subject.other |
Electrodes |
en |
dc.subject.other |
Gold |
en |
dc.subject.other |
Nanostructured materials |
en |
dc.subject.other |
Nonvolatile storage |
en |
dc.subject.other |
Silica |
en |
dc.subject.other |
Charge storage |
en |
dc.subject.other |
PROM |
en |
dc.title |
Hybrid silicon-organic nanoparticle memory device |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1063/1.1604962 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1063/1.1604962 |
en |
heal.language |
English |
en |
heal.publicationDate |
2003 |
en |
heal.abstract |
We demonstrate a nonvolatile electrically erasable programmable read-only memory device using gold nanoparticles as charge storage elements deposited at room temperature by chemical processing. The nanoparticles are deposited over a thermal silicon dioxide layer that insulates them from the device silicon channel. An organic insulator deposited by the Langmuir-Blodget technique at room temperature separates the aluminum gate electrode from the nanoparticles. The device exhibits significant threshold voltage shifts after application of low-voltage pulses (less than or equal to+/-6 V) to the gate and has nonvolatile retention time characteristics. (C) 2003 American Institute of Physics. |
en |
heal.publisher |
AMER INST PHYSICS |
en |
heal.journalName |
Journal of Applied Physics |
en |
dc.identifier.doi |
10.1063/1.1604962 |
en |
dc.identifier.isi |
ISI:000185664300078 |
en |
dc.identifier.volume |
94 |
en |
dc.identifier.issue |
8 |
en |
dc.identifier.spage |
5234 |
en |
dc.identifier.epage |
5239 |
en |