Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model

Sallese, J-M; Bucher, M; Krummenacher, F; Fazan, P

dc.contributor.author	Sallese, J-M	en
dc.contributor.author	Bucher, M	en
dc.contributor.author	Krummenacher, F	en
dc.contributor.author	Fazan, P	en
dc.date.accessioned	2014-03-01T01:19:04Z
dc.date.available	2014-03-01T01:19:04Z
dc.date.issued	2003	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15361
dc.subject	EKV	en
dc.subject	Inversion charge	en
dc.subject	Linearization	en
dc.subject	MOSFET	en
dc.subject	Normalization	en
dc.subject	Surface potential	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Approximation theory	en
dc.subject.other	Electric potential	en
dc.subject.other	Linearization	en
dc.subject.other	Mathematical models	en
dc.subject.other	Transistors	en
dc.subject.other	Surface potential	en
dc.subject.other	MOSFET devices	en
dc.title	Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0038-1101(02)00336-2	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0038-1101(02)00336-2	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	In this paper, the implications of inversion charge linearization in compact MOS transistor modeling are discussed. The charge-sheet model provides the basic relation among inversion charge and applied potentials, via the implicit surface potential. A rigorous derivation of simpler relations among inversion charge and applied external potentials is provided, using the technique of inversion charge linearization versus surface potential. The new concept of the pinch-off surface potential and a new definition of the inversion charge linearization factor are introduced. In particular, we show that the EKV charge-based model can be considered as an approximation to the more general approach presented here. An improvement to the EKV charge-based model is proposed in the form of a more accurate charge-voltage relationship. This model is analyzed in detail and shows an excellent agreement with the charge sheet model. The normalization of voltages, current and charges, as motivated by the inversion charge linearization, results in a major simplification in compact modeling in static as well as non-quasi-static derivations. (C) 2002 Elsevier Science Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/S0038-1101(02)00336-2	en
dc.identifier.isi	ISI:000181539300013	en
dc.identifier.volume	47	en
dc.identifier.issue	4	en
dc.identifier.spage	677	en
dc.identifier.epage	683	en