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Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures

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dc.contributor.author Paul, S en
dc.contributor.author Pearson, C en
dc.contributor.author Molloy, A en
dc.contributor.author Cousins, MA en
dc.contributor.author Green, M en
dc.contributor.author Kolliopoulou, S en
dc.contributor.author Dimitrakis, P en
dc.contributor.author Normand, P en
dc.contributor.author Tsoukalas, D en
dc.contributor.author Petty, MC en
dc.date.accessioned 2014-03-01T01:19:05Z
dc.date.available 2014-03-01T01:19:05Z
dc.date.issued 2003 en
dc.identifier.issn 1530-6984 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/15376
dc.subject langmuir-blodgett film en
dc.subject.classification Chemistry, Multidisciplinary en
dc.subject.classification Nanoscience & Nanotechnology en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.other gold en
dc.subject.other article en
dc.subject.other electric capacitance en
dc.subject.other electric potential en
dc.subject.other electricity en
dc.subject.other electronics en
dc.subject.other hysteresis en
dc.subject.other nanoparticle en
dc.subject.other semiconductor en
dc.title Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures en
heal.type journalArticle en
heal.identifier.primary 10.1021/nl034008t en
heal.identifier.secondary http://dx.doi.org/10.1021/nl034008t en
heal.language English en
heal.publicationDate 2003 en
heal.abstract The Langmuir-Blodgett deposition of organically passivated gold nanoparticles is reported. A monolayer of these particles has been incorporated into a metal-insulator-semiconductor (MIS) structure. The MIS device exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions. Charge storage in the layer of nanoparticles is thought to be responsible for this effect. en
heal.publisher AMER CHEMICAL SOC en
heal.journalName Nano Letters en
dc.identifier.doi 10.1021/nl034008t en
dc.identifier.isi ISI:000182201800021 en
dc.identifier.volume 3 en
dc.identifier.issue 4 en
dc.identifier.spage 533 en
dc.identifier.epage 536 en


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