Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate

Skarlatos, D; Tsamis, C; Tsoukalas, D

dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:19:24Z
dc.date.available	2014-03-01T01:19:24Z
dc.date.issued	2003	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15470
dc.subject.classification	Physics, Applied	en
dc.subject.other	Crystal defects	en
dc.subject.other	Diffusion	en
dc.subject.other	Electronic equipment	en
dc.subject.other	Nitrogen	en
dc.subject.other	Oxidation	en
dc.subject.other	Reaction kinetics	en
dc.subject.other	Silica	en
dc.subject.other	Thermal effects	en
dc.subject.other	Nitrogen implantation	en
dc.subject.other	Silicon wafers	en
dc.title	Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1535260	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1535260	en
heal.language	English	en
heal.publicationDate	2003	en
heal.abstract	It is well known that nitrogen implantation in silicon leads in reduction of the SiO2 thickness in implanted wafers, which makes this a very promising technique for present and future device processing. In this work we investigate the influence of the implantation energy on oxidation kinetics in nitrogen-implanted silicon. Nitrogen was implanted in silicon wafers at low (3 keV), and medium (25, 80, and 150 keV) energies and oxidations were performed at various temperatures (800-900degreesC) and times. The experiment shows that the decrease in the oxide thickness is smaller when nitrogen is implanted closer to the silicon surface. We attribute this to nitrogen out-diffusion during the ramping and the initial oxidation steps, which is more effective when nitrogen is placed closer to the surface. Additional experiments varying the ramping time support this explanation. An additional study of the growth of extended defects under the different implantation conditions has been performed. This study enabled the estimation of an energy-dose "window," in which we can observe very small oxide thickness (25-40Angstrom) without extended defects formation. (C) 2003 American Institute of Physics. [DOI: 10.1063/1.1535260].	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.1535260	en
dc.identifier.isi	ISI:000180630200080	en
dc.identifier.volume	93	en
dc.identifier.issue	3	en
dc.identifier.spage	1832	en
dc.identifier.epage	1838	en