An experimentally assisted computational analysis of tin oxide deposition in a cold-wall APCVD reactor

Xenidou, TC; Boudouvis, AG; Tsamakis, DM; Markatos, NC

dc.contributor.author	Xenidou, TC	en
dc.contributor.author	Boudouvis, AG	en
dc.contributor.author	Tsamakis, DM	en
dc.contributor.author	Markatos, NC	en
dc.date.accessioned	2014-03-01T01:19:54Z
dc.date.available	2014-03-01T01:19:54Z
dc.date.issued	2004	en
dc.identifier.issn	0013-4651	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15752
dc.subject	Computer Analysis	en
dc.subject	Tin Oxide	en
dc.subject.classification	Electrochemistry	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.other	Adsorption	en
dc.subject.other	Chemical reactors	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Computational fluid dynamics	en
dc.subject.other	Computer simulation	en
dc.subject.other	Growth kinetics	en
dc.subject.other	Mathematical models	en
dc.subject.other	Oxidation	en
dc.subject.other	Oxides	en
dc.subject.other	Silicon	en
dc.subject.other	Atmospheric pressure chemical vapor deposition (APCVD)	en
dc.subject.other	Computational fluid dynamics (CFD) simulation	en
dc.subject.other	Growth rates	en
dc.subject.other	Tin oxide	en
dc.subject.other	Tin compounds	en
dc.title	An experimentally assisted computational analysis of tin oxide deposition in a cold-wall APCVD reactor	en
heal.type	journalArticle	en
heal.identifier.primary	10.1149/1.1809592	en
heal.identifier.secondary	http://dx.doi.org/10.1149/1.1809592	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	The design of a chemical vapor deposition (CVD) process in a complex reactor configuration was performed by combining computational fluid dynamics (CFD) simulations and experiments. This design methodology was implemented in a horizontal cold-wall reactor, where tin oxide deposition on silicon substrates at atmospheric pressure (APCVD) was experimentally investigated. A set of measured growth rates at different operating conditions was used to determine a Langmuir-Hinshelwood mechanism of the growth kinetics of tin oxide films by tin tetrachloride oxidation in a single-wafer reactor. The coupled kinetic/CFD model was then used to further analyze the influence of some key operating parameters on the process performance. Simulation results are suggestive of modifications in the operating parameters that could enhance the uniformity of the layer thickness. In particular, the uniformity of the layer thickness was investigated, with special attention paid to the origins of the axial and transverse heterogeneities on the wafer for each of the parameters examined, thus opening possible ways of process improvement. © 2004 The Electrochemical Society. All rights reserved.	en
heal.publisher	ELECTROCHEMICAL SOC INC	en
heal.journalName	Journal of the Electrochemical Society	en
dc.identifier.doi	10.1149/1.1809592	en
dc.identifier.isi	ISI:000225068500039	en
dc.identifier.volume	151	en
dc.identifier.issue	12	en
dc.identifier.spage	C757	en
dc.identifier.epage	C764	en