Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices

Konofaos, N; Evangelou, EK; Aslanoglou, X; Kokkoris, M; Vlastou, R

dc.contributor.author	Konofaos, N	en
dc.contributor.author	Evangelou, EK	en
dc.contributor.author	Aslanoglou, X	en
dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Vlastou, R	en
dc.date.accessioned	2014-03-01T01:20:14Z
dc.date.available	2014-03-01T01:20:14Z
dc.date.issued	2004	en
dc.identifier.issn	0268-1242	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15864
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Capacitance measurement	en
dc.subject.other	Chemical vapor deposition	en
dc.subject.other	Composition	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Electric charge	en
dc.subject.other	Electric conductance	en
dc.subject.other	Metallizing	en
dc.subject.other	Microelectronics	en
dc.subject.other	MOS devices	en
dc.subject.other	Nitrogen	en
dc.subject.other	Permittivity	en
dc.subject.other	Rutherford backscattering spectroscopy	en
dc.subject.other	Semiconducting films	en
dc.subject.other	Thin films	en
dc.subject.other	Electric admittance spectroscopy	en
dc.subject.other	Trapped charges	en
dc.subject.other	Semiconducting silicon compounds	en
dc.title	Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0268-1242/19/1/008	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0268-1242/19/1/008	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	The bulk properties of SiON films grown on n-Si substrates by CVD are examined by means of electrical measurements and Rutherford backscattering spectroscopy (RBS). The main aim of this project was to investigate the performance of the films in order to test their suitability for the construction of CMOS devices with SiON being the gate insulator. The CVD technique was used to produce the films and subsequent metallization leads to the creation of MOS devices. Rutherford backscattering spectroscopy (RBS) was used to verify the film bulk properties. Electrical measurements including current-voltage, capacitance-conductance-voltage (C-G-V) measurements and admittance spectroscopy were performed allowing determination of the bulk trapped charges and the dielectric constant of the films. These charges were calculated to have values between 0.76 nCb and 2.54 nCb, while the dielectric constant of the films was found to be quite high, with values greater than 5 and as high as 34. The RBS concluded that the films were uniform, and the nitrogen concentration was not higher than 10%.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Semiconductor Science and Technology	en
dc.identifier.doi	10.1088/0268-1242/19/1/008	en
dc.identifier.isi	ISI:000220889200011	en
dc.identifier.volume	19	en
dc.identifier.issue	1	en
dc.identifier.spage	50	en
dc.identifier.epage	53	en