Effect of Post-Hydrogenation on the Structural Properties of Amorphous Silicon Network

Pantchev, B; Danesh, P; Liarokapis, E; Schmidt, B; Schmidt, J; Grambole, D

dc.contributor.author	Pantchev, B	en
dc.contributor.author	Danesh, P	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Schmidt, B	en
dc.contributor.author	Schmidt, J	en
dc.contributor.author	Grambole, D	en
dc.date.accessioned	2014-03-01T01:20:17Z
dc.date.available	2014-03-01T01:20:17Z
dc.date.issued	2004	en
dc.identifier.issn	0021-4922	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15883
dc.subject	Amorphous silicon	en
dc.subject	Hydrogen depth distribution	en
dc.subject	Post-hydrogenatlon	en
dc.subject	Raman spectroscopy	en
dc.subject	Structure of amorphous silicon network	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Crystallization	en
dc.subject.other	Hydrogenation	en
dc.subject.other	Magnetron sputtering	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Semiconducting films	en
dc.subject.other	Synthesis (chemical)	en
dc.subject.other	Hydrogen depth distribution	en
dc.subject.other	Nuclear reaction analysis (NRA)	en
dc.subject.other	Post-hydrogenation	en
dc.subject.other	Structure of amorphous silicon network	en
dc.subject.other	Amorphous silicon	en
dc.title	Effect of Post-Hydrogenation on the Structural Properties of Amorphous Silicon Network	en
heal.type	journalArticle	en
heal.identifier.primary	10.1143/JJAP.43.454	en
heal.identifier.secondary	http://dx.doi.org/10.1143/JJAP.43.454	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	Post-hydrogenation of magnetron sputtered amorphous silicon films has been carried out with the aim to study the effect of hydrogen interaction with amorphous silicon network on its short and medium range order. Raman spectroscopy has been used to study the variations in the amorphous structure. Nuclear reaction analysis (NRA) has been used to determine the total amount and depth distribution of the penetrated hydrogen atoms. The concentration of the silicon-bonded hydrogen and the bonding configurations have been established by means of infrared (IR) transmission measurements. The values of hydrogen concentration evaluated by NRA and IR spectroscopy coincide within the measurement accuracy, suggesting that the hydrogen diffusion proceeds via interaction with the host silicon atoms. This interaction is accompanied by a rearrangement of the strained Si-Si bonds which leads to an improvement of the amorphous network.	en
heal.publisher	INST PURE APPLIED PHYSICS	en
heal.journalName	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers	en
dc.identifier.doi	10.1143/JJAP.43.454	en
dc.identifier.isi	ISI:000220401000006	en
dc.identifier.volume	43	en
dc.identifier.issue	2	en
dc.identifier.spage	454	en
dc.identifier.epage	458	en