Exciton related resonant Raman scattering from CdSe quantum dots in an amorphous GeS2 thin film matrix

Raptis, C; Nesheva, D; Boulmetis, YC; Levi, Z; Aneva, Z

dc.contributor.author	Raptis, C	en
dc.contributor.author	Nesheva, D	en
dc.contributor.author	Boulmetis, YC	en
dc.contributor.author	Levi, Z	en
dc.contributor.author	Aneva, Z	en
dc.date.accessioned	2014-03-01T01:20:26Z
dc.date.available	2014-03-01T01:20:26Z
dc.date.issued	2004	en
dc.identifier.issn	0953-8984	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15922
dc.subject	Thin Film	en
dc.subject	Quantum Dot	en
dc.subject	Resonance Raman	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Cadmium compounds	en
dc.subject.other	Excitons	en
dc.subject.other	Germanium compounds	en
dc.subject.other	Matrix algebra	en
dc.subject.other	Nanostructured materials	en
dc.subject.other	Raman scattering	en
dc.subject.other	Thin films	en
dc.subject.other	Band-gap matrices	en
dc.subject.other	Excitation radiation	en
dc.subject.other	Resonant Raman scattering	en
dc.subject.other	Thin film matrix	en
dc.subject.other	Semiconductor quantum dots	en
dc.title	Exciton related resonant Raman scattering from CdSe quantum dots in an amorphous GeS2 thin film matrix	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0953-8984/16/46/009	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0953-8984/16/46/009	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	CdSe quantum dots have been produced in an amorphous GeS2 thin film matrix by alternating thermal evaporation in vacuum and deposition of several CdSe and GeS2 layers, with the thickness of the latter being, typically, 20 times larger than that of the former. Raman scattering spectra of these films have been measured over the temperature range 20-293 K using four Ar+ laser lines for the excitation and studied with emphasis on the position and intensity of the longitudinal optical phonons of CdSe. A shift of these phonons to lower frequencies is seen which increases with decreasing CdSe layer thickness. On the other hand, resonant Raman effects have been observed as the phonon intensity depends strongly on the nominal CdSe layer thickness, excitation energy and temperature. These results imply formation of high quality CdSe quantum dots in the amorphous GeS2 thin film matrix and are interpreted in terms of resonant absorption in exciton electronic states of these quantuin dots.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics Condensed Matter	en
dc.identifier.doi	10.1088/0953-8984/16/46/009	en
dc.identifier.isi	ISI:000225706000012	en
dc.identifier.volume	16	en
dc.identifier.issue	46	en
dc.identifier.spage	8221	en
dc.identifier.epage	8232	en