Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silane

Danesh, P; Pantchev, B; Antonova, K; Liarokapis, E; Schmidt, B; Grambole, D; Baran, J

dc.contributor.author	Danesh, P	en
dc.contributor.author	Pantchev, B	en
dc.contributor.author	Antonova, K	en
dc.contributor.author	Liarokapis, E	en
dc.contributor.author	Schmidt, B	en
dc.contributor.author	Grambole, D	en
dc.contributor.author	Baran, J	en
dc.date.accessioned	2014-03-01T01:20:36Z
dc.date.available	2014-03-01T01:20:36Z
dc.date.issued	2004	en
dc.identifier.issn	0022-3727	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/15979
dc.subject	Hydrogen Bond	en
dc.subject	Hydrogenated Amorphous Silicon	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Fourier transform infrared spectroscopy	en
dc.subject.other	Hydrogen bonds	en
dc.subject.other	Hydrogenation	en
dc.subject.other	Light absorption	en
dc.subject.other	Phase transitions	en
dc.subject.other	Plasma enhanced chemical vapor deposition	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Silanes	en
dc.subject.other	Spectrometers	en
dc.subject.other	Hydrogenated amorphous silicon	en
dc.subject.other	Infrared absorption	en
dc.subject.other	Jobin-Yvon triple spectrometer	en
dc.subject.other	Nuclear reaction analysis	en
dc.subject.other	Amorphous silicon	en
dc.title	Hydrogen bonding and structural order in hydrogenated amorphous silicon prepared with hydrogen-diluted silane	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0022-3727/37/2/013	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0022-3727/37/2/013	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	A study of the structural development of hydrogenated amorphous silicon (a-Si: H) during plasma-enhanced chemical vapour deposition with hydrogen-diluted silane has been carried out with focus on the variations in the hydrogen bonding configuration and in the amorphous silicon network with increasing film thickness. In addition, the hypothesis of a high fraction of non-bonded (molecular) hydrogen in a-Si: H has been tested. The total hydrogen concentration and its silicon-bonded fraction have been estimated by means of nuclear reaction analysis and infrared spectroscopy, respectively. It has been shown that the presumable molecular hydrogen is not detectable within the limits of the measurement accuracy of the methods used. The hydrogen concentration is uniformly distributed along the growth direction, and the infrared absorption modes at 2000 and 2100 cm(-1) are not affected by increasing the film thickness. Raman spectroscopy has been used to follow the variations in the structure of the silicon network. The increase in the film thickness leads to an improved ordering of the amorphous network on the short and medium range scale for films deposited at low substrate temperatures. In films deposited at high substrate temperatures, the tendency of structural improvement has been detected only on the medium range scale.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics D: Applied Physics	en
dc.identifier.doi	10.1088/0022-3727/37/2/013	en
dc.identifier.isi	ISI:000221220400013	en
dc.identifier.volume	37	en
dc.identifier.issue	2	en
dc.identifier.spage	249	en
dc.identifier.epage	254	en