Mapping of gradient composition CuxGay/Se 2 film properties using Raman and PL-spectroscopy

Xue, C; Papadimitriou, D; Esser, N

dc.contributor.author	Xue, C	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Esser, N	en
dc.date.accessioned	2014-03-01T01:20:52Z
dc.date.available	2014-03-01T01:20:52Z
dc.date.issued	2004	en
dc.identifier.issn	0022-3727	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16035
dc.subject	Band Gap	en
dc.subject	Raman Spectra	en
dc.subject	Raman Spectroscopy	en
dc.subject	Signal To Noise Ratio	en
dc.subject	Solar Cell	en
dc.subject	Energy Dispersive X Ray	en
dc.subject	Physical Vapour Deposition	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Composition	en
dc.subject.other	Energy dispersive spectroscopy	en
dc.subject.other	Film growth	en
dc.subject.other	Metallorganic chemical vapor deposition	en
dc.subject.other	Photoluminescence	en
dc.subject.other	Physical vapor deposition	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Solar cells	en
dc.subject.other	Film crystallinity	en
dc.subject.other	Gradient composition	en
dc.subject.other	Raman modes	en
dc.subject.other	Copper compounds	en
dc.title	Mapping of gradient composition CuxGay/Se 2 film properties using Raman and PL-spectroscopy	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/0022-3727/37/16/008	en
heal.identifier.secondary	http://dx.doi.org/10.1088/0022-3727/37/16/008	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	Detailed Raman studies were conducted for the structural characterization of CuxGaySe2 films grown using physical vapour deposition. CuxGaySe2 gradient composition samples were mapped using Raman spectroscopy in combination with photoluminescence (PL) and energy dispersive x-ray spectroscopy. The Raman spectra recorded under excitation with near band Gap laser light have a high signal-to-noise ratio and can be used to study the film structure. In particular, composition dependent changes result in significant changes in the A(1)-mode frequency at 187 cm(-1), 5 the line width of the E-1-mode at 277 cm(-1), and the normalized intensities of the El-mode at 277 cm(-1) and the B-2-mode at 199 cm(-1). It is shown that the intensity increase in Raman modes, with the [Ga]-content increasing in the range 0.9 < [Cu]/[Ga] < 1, is correlated to an increase in defect concentration and lowering of film crystallinity. Moreover, it is shown that the [Cu]/[Ga] fraction of Ga-rich films, used in solar cell device applications, can be calibrated with respect to the band width of the E-1-mode.	en
heal.publisher	IOP PUBLISHING LTD	en
heal.journalName	Journal of Physics D: Applied Physics	en
dc.identifier.doi	10.1088/0022-3727/37/16/008	en
dc.identifier.isi	ISI:000223941100009	en
dc.identifier.volume	37	en
dc.identifier.issue	16	en
dc.identifier.spage	2267	en
dc.identifier.epage	2273	en