P-n junction photocurrent modelling evaluation under optical and electrical excitation

Dervos, CT; Skafidas, PD; Mergos, JA; Vassiliou, P

dc.contributor.author	Dervos, CT	en
dc.contributor.author	Skafidas, PD	en
dc.contributor.author	Mergos, JA	en
dc.contributor.author	Vassiliou, P	en
dc.date.accessioned	2014-03-01T01:21:14Z
dc.date.available	2014-03-01T01:21:14Z
dc.date.issued	2004	en
dc.identifier.issn	1424-8220	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16151
dc.subject	P-n junction modelling	en
dc.subject	Photocurrent	en
dc.subject	Photovoltaics	en
dc.subject	Semiconductor applications	en
dc.subject.classification	Chemistry, Analytical	en
dc.subject.classification	Electrochemistry	en
dc.subject.classification	Instruments & Instrumentation	en
dc.subject.other	Forward bias	en
dc.subject.other	p-n junction modeling	en
dc.subject.other	Reverse bias	en
dc.subject.other	Semiconductor applications	en
dc.subject.other	Approximation theory	en
dc.subject.other	Computer simulation	en
dc.subject.other	Current voltage characteristics	en
dc.subject.other	Curve fitting	en
dc.subject.other	Diffusion in solids	en
dc.subject.other	Electric resistance	en
dc.subject.other	Mathematical models	en
dc.subject.other	Photocurrents	en
dc.subject.other	Photovoltaic effects	en
dc.subject.other	Semiconductor junctions	en
dc.title	P-n junction photocurrent modelling evaluation under optical and electrical excitation	en
heal.type	journalArticle	en
heal.identifier.primary	10.3390/s40500058	en
heal.identifier.secondary	http://dx.doi.org/10.3390/s40500058	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, has been experimentally investigated under synchronous electrical and optical excitation of silicon photo-diodes. The devices had areas of 8.2 mm2 and reverse bias saturation currents of the order of 10-10 A. Their current-voltage (I-V) response was exploited experimentally both in the dark and under various illumination levels. The quoted values for the saturation current, the ideality factor, the series resistance and the reverse-bias photocurrent are investigated for the simulation of the I-V curves via the quasi-equilibrium model. In addition, the measured I-V data have been further analysed to estimate the produced photocurrent as a function of the applied bias (forward or reverse) under given illumination levels. Comparisons between the simulated curves and the experimental data allowed a detailed photocurrent modelling validation. The proposed approach could be useful towards studying other parameters of optically activated p-n junctions such as: the bias dependence of the minority carrier diffusion lengths and/or the generated rates of electron-hole pairs (EHP). © 2004 by MDPI.	en
heal.publisher	MOLECULAR DIVERSITY PRESERVATION INTERNATIONAL	en
heal.journalName	Sensors	en
dc.identifier.doi	10.3390/s40500058	en
dc.identifier.isi	ISI:000223681900002	en
dc.identifier.volume	4	en
dc.identifier.issue	5	en
dc.identifier.spage	58	en
dc.identifier.epage	70	en