Fabrication and characterization of a metal nanocrystal memory using molecular beam epitaxy

Sargentis, Ch; Giannakopoulos, K; Travlos, A; Tsamakis, D

dc.contributor.author	Sargentis, Ch	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Travlos, A	en
dc.contributor.author	Tsamakis, D	en
dc.date.accessioned	2014-03-01T01:22:23Z
dc.date.available	2014-03-01T01:22:23Z
dc.date.issued	2005	en
dc.identifier.issn	17426588	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16547
dc.subject	Molecular Beam Epitaxy	en
dc.title	Fabrication and characterization of a metal nanocrystal memory using molecular beam epitaxy	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/1742-6596/10/1/014	en
heal.identifier.secondary	http://dx.doi.org/10.1088/1742-6596/10/1/014	en
heal.publicationDate	2005	en
heal.abstract	Recently, single and few electron devices have attracted a lot of attention due to their advantages when compared to the conventional DRAM or Flash memories. There is also a great effort to replace the silicon oxide (SiO 2) with materials of high dielectric constant that could allow the further downscaling of MOSFET devices. In this work, initially we study the hafnium oxide (HfO2) deposition on thin SiO2. We fabricate a HfO2 layer, with good dielectric properties and with high dielectric constant. Then, we fabricate a novel MOS memory device with platinum (Pt) nanoparticles embedded in the HfO2/SiO2 interface. © 2005 IOP Publishing Ltd.	en
heal.journalName	Journal of Physics: Conference Series	en
dc.identifier.doi	10.1088/1742-6596/10/1/014	en
dc.identifier.volume	10	en
dc.identifier.issue	1	en
dc.identifier.spage	53	en
dc.identifier.epage	56	en