Fabrication and characterization of a metal nanocrystal memory using molecular beam epitaxy

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dc.contributor.author Sargentis, Ch en
dc.contributor.author Giannakopoulos, K en
dc.contributor.author Travlos, A en
dc.contributor.author Tsamakis, D en
dc.date.accessioned 2014-03-01T01:22:23Z
dc.date.available 2014-03-01T01:22:23Z
dc.date.issued 2005 en
dc.identifier.issn 17426588 en
dc.identifier.uri http://hdl.handle.net/123456789/16547
dc.subject Molecular Beam Epitaxy en
dc.title Fabrication and characterization of a metal nanocrystal memory using molecular beam epitaxy en
heal.type journalArticle en
heal.identifier.primary 10.1088/1742-6596/10/1/014 en
heal.identifier.secondary http://dx.doi.org/10.1088/1742-6596/10/1/014 en
heal.publicationDate 2005 en
heal.abstract Recently, single and few electron devices have attracted a lot of attention due to their advantages when compared to the conventional DRAM or Flash memories. There is also a great effort to replace the silicon oxide (SiO 2) with materials of high dielectric constant that could allow the further downscaling of MOSFET devices. In this work, initially we study the hafnium oxide (HfO2) deposition on thin SiO2. We fabricate a HfO2 layer, with good dielectric properties and with high dielectric constant. Then, we fabricate a novel MOS memory device with platinum (Pt) nanoparticles embedded in the HfO2/SiO2 interface. © 2005 IOP Publishing Ltd. en
heal.journalName Journal of Physics: Conference Series en
dc.identifier.doi 10.1088/1742-6596/10/1/014 en
dc.identifier.volume 10 en
dc.identifier.issue 1 en
dc.identifier.spage 53 en
dc.identifier.epage 56 en

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