Highly sensitive strain detection in silicon by reflectance anisotropy spectroscopy

Papadimitriou, D; Richter, W

dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Richter, W	en
dc.date.accessioned	2014-03-01T01:22:27Z
dc.date.available	2014-03-01T01:22:27Z
dc.date.issued	2005	en
dc.identifier.issn	1098-0121	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16580
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	BANDGAP OPTICAL ANISOTROPIES	en
dc.subject.other	CUBIC SEMICONDUCTORS	en
dc.subject.other	RAMAN	en
dc.subject.other	GE	en
dc.subject.other	SI	en
dc.title	Highly sensitive strain detection in silicon by reflectance anisotropy spectroscopy	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevB.72.075212	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevB.72.075212	en
heal.identifier.secondary	075212	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	Reflectance anisotropy spectroscopy (RAS) measurements were performed on strained silicon (Si) stripes cut from crystalline silicon wafers. Strains were externally applied using a device developed especially for the study of layers and layered structures. The dependence of the RAS signal intensity on strain was measured for (100), (110), and (111) silicon wafers strained along [001] and [011]. In these configurations, the RAS spectra show a derivativelike structure at 3.4 eV, which increases in amplitude linearly with strain. While RAS line shapes depend on the orientation of the Si wafer and the crystallographic directions along which strains are applied, RAS intensities depend on strain magnitude. Strains as low as 10-5 can be measured, which is two orders of magnitude smaller than those detected with standard techniques such as Raman, piezoelectroreflectance spectroscopy (PERS), or x-ray diffraction (XRD). The experimental RAS spectra are found to be in good agreement with spectra calculated on the basis of the spectral response of the published piezo-optical tensor components. It is concluded that RAS provides a highly sensitive tool for the detection of strain induced bulk anisotropies. Strain calibrated RAS spectra can be used for strain-stress characterization of semiconductor layers and microstructures with a higher efficiency than that achieved by Raman, PERS, and XRD. Combined with growth techniques, RAS spectroscopy can be also used for in situ control of strain during semiconductor growth. © 2005 The American Physical Society.	en
heal.publisher	AMERICAN PHYSICAL SOC	en
heal.journalName	Physical Review B - Condensed Matter and Materials Physics	en
dc.identifier.doi	10.1103/PhysRevB.72.075212	en
dc.identifier.isi	ISI:000231564500086	en
dc.identifier.volume	72	en
dc.identifier.issue	7	en