dc.contributor.author |
Brilis, N |
en |
dc.contributor.author |
Romesis, P |
en |
dc.contributor.author |
Tsamakis, D |
en |
dc.contributor.author |
Kompitsas, M |
en |
dc.date.accessioned |
2014-03-01T01:22:31Z |
|
dc.date.available |
2014-03-01T01:22:31Z |
|
dc.date.issued |
2005 |
en |
dc.identifier.issn |
0749-6036 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/16599 |
|
dc.subject |
On-line Control |
en |
dc.subject |
Pulsed Laser Deposition |
en |
dc.subject |
Thin Film |
en |
dc.subject |
Zinc Oxide |
en |
dc.subject |
zno thin film |
en |
dc.subject.classification |
Physics, Condensed Matter |
en |
dc.subject.other |
Gold |
en |
dc.subject.other |
Nanostructured materials |
en |
dc.subject.other |
Temperature distribution |
en |
dc.subject.other |
Thin films |
en |
dc.subject.other |
Zinc oxide |
en |
dc.subject.other |
Deposition parameters |
en |
dc.subject.other |
Film properties |
en |
dc.subject.other |
Laser parameters |
en |
dc.subject.other |
Pulsed laser deposition |
en |
dc.title |
Influence of pulsed laser deposition (PLD) parameters on the H2 sensing properties of zinc oxide thin films |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1016/j.spmi.2005.08.003 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1016/j.spmi.2005.08.003 |
en |
heal.language |
English |
en |
heal.publicationDate |
2005 |
en |
heal.abstract |
Thin films of n-type ZnO were produced by a novel two-target, two-pulsed laser deposition technique. This method allows on-line control of the film properties by just changing the laser parameters. A number of deposition parameters, as well as the dopants (Al, Au) and the substrate type (Si, SiO2, glass), were changed. The sensing properties of the films were tested upon exposure to a H-2 flow in air ambient at working temperatures between 150 and 210 degrees C. Undoped ZnO thin films. deposited on SiO2 substrates at 200 degrees C, in ambient O-2 at 20 Pa and with a laser fluence of 9.6 J/cm(3), exhibited a maximum sensitivity (Delta R/R-0) higher than 97% and a response time lower than 3 min at the working temperature 180 degrees C. Decrease of the working temperature to 150 degrees C was achieved by means of surface sensitization of films after deposition of Au nanoclusters on the surface of the above-mentioned ZnO thin films. (C) 2005 Elsevier Ltd. All rights reserved. |
en |
heal.publisher |
ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD |
en |
heal.journalName |
Superlattices and Microstructures |
en |
dc.identifier.doi |
10.1016/j.spmi.2005.08.003 |
en |
dc.identifier.isi |
ISI:000233651800008 |
en |
dc.identifier.volume |
38 |
en |
dc.identifier.issue |
4-6 |
en |
dc.identifier.spage |
283 |
en |
dc.identifier.epage |
290 |
en |