Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures

Kontos, AG; Raptis, YS; Pelekanos, NT; Georgakilas, A; Bellet-Amalric, E; Jalabert, D

dc.contributor.author	Kontos, AG	en
dc.contributor.author	Raptis, YS	en
dc.contributor.author	Pelekanos, NT	en
dc.contributor.author	Georgakilas, A	en
dc.contributor.author	Bellet-Amalric, E	en
dc.contributor.author	Jalabert, D	en
dc.date.accessioned	2014-03-01T01:22:45Z
dc.date.available	2014-03-01T01:22:45Z
dc.date.issued	2005	en
dc.identifier.issn	1098-0121	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16642
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	CRITICAL LAYER THICKNESS	en
dc.subject.other	DEFORMATION POTENTIALS	en
dc.subject.other	EPITAXIAL LAYERS	en
dc.subject.other	BIAXIAL STRAIN	en
dc.subject.other	GAN	en
dc.subject.other	SCATTERING	en
dc.subject.other	PHONON	en
dc.subject.other	GROWTH	en
dc.subject.other	ALN	en
dc.subject.other	INHOMOGENEITY	en
dc.title	Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures	en
heal.type	journalArticle	en
heal.identifier.primary	10.1103/PhysRevB.72.155336	en
heal.identifier.secondary	http://dx.doi.org/10.1103/PhysRevB.72.155336	en
heal.identifier.secondary	155336	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	InxGa1-xN/GaN/Al2O3 (0001) heterostructures with x=10.5%, 13.5%, 19.0%, 19.6%, and 26.5% are studied, by polarized micro-Raman spectroscopy, under plane and side backscattering geometries. The combination of both scattering geometries, together with variable excitation wavelengths, enabled the possibility to check independently strain-vs-depth distribution and selective-resonance effects from In-rich regions. Several Raman modes have been detected and were attributed to either the GaN or the InGaN films. Particular modes, which are not permitted in the bulk materials, are activated in the InGaN layers. Shifts of the frequencies relative to the ones expected in the bulk materials are explained as due to the elastic strains present in the hetero-structures. The results are evaluated in combination with compositional RBS analysis and the strain values obtained are compared with high resolution x-ray diffraction results including reciprocal space mapping, leading to very good consistency between Raman and XRD. Consequent relaxation values are obtained and the underlying mechanisms are discussed. © 2005 The American Physical Society.	en
heal.publisher	AMERICAN PHYSICAL SOC	en
heal.journalName	Physical Review B - Condensed Matter and Materials Physics	en
dc.identifier.doi	10.1103/PhysRevB.72.155336	en
dc.identifier.isi	ISI:000232934400105	en
dc.identifier.volume	72	en
dc.identifier.issue	15	en