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Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures

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dc.contributor.author Kontos, AG en
dc.contributor.author Raptis, YS en
dc.contributor.author Pelekanos, NT en
dc.contributor.author Georgakilas, A en
dc.contributor.author Bellet-Amalric, E en
dc.contributor.author Jalabert, D en
dc.date.accessioned 2014-03-01T01:22:45Z
dc.date.available 2014-03-01T01:22:45Z
dc.date.issued 2005 en
dc.identifier.issn 1098-0121 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/16642
dc.subject.classification Physics, Condensed Matter en
dc.subject.other CRITICAL LAYER THICKNESS en
dc.subject.other DEFORMATION POTENTIALS en
dc.subject.other EPITAXIAL LAYERS en
dc.subject.other BIAXIAL STRAIN en
dc.subject.other GAN en
dc.subject.other SCATTERING en
dc.subject.other PHONON en
dc.subject.other GROWTH en
dc.subject.other ALN en
dc.subject.other INHOMOGENEITY en
dc.title Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures en
heal.type journalArticle en
heal.identifier.primary 10.1103/PhysRevB.72.155336 en
heal.identifier.secondary http://dx.doi.org/10.1103/PhysRevB.72.155336 en
heal.identifier.secondary 155336 en
heal.language English en
heal.publicationDate 2005 en
heal.abstract InxGa1-xN/GaN/Al2O3 (0001) heterostructures with x=10.5%, 13.5%, 19.0%, 19.6%, and 26.5% are studied, by polarized micro-Raman spectroscopy, under plane and side backscattering geometries. The combination of both scattering geometries, together with variable excitation wavelengths, enabled the possibility to check independently strain-vs-depth distribution and selective-resonance effects from In-rich regions. Several Raman modes have been detected and were attributed to either the GaN or the InGaN films. Particular modes, which are not permitted in the bulk materials, are activated in the InGaN layers. Shifts of the frequencies relative to the ones expected in the bulk materials are explained as due to the elastic strains present in the hetero-structures. The results are evaluated in combination with compositional RBS analysis and the strain values obtained are compared with high resolution x-ray diffraction results including reciprocal space mapping, leading to very good consistency between Raman and XRD. Consequent relaxation values are obtained and the underlying mechanisms are discussed. © 2005 The American Physical Society. en
heal.publisher AMERICAN PHYSICAL SOC en
heal.journalName Physical Review B - Condensed Matter and Materials Physics en
dc.identifier.doi 10.1103/PhysRevB.72.155336 en
dc.identifier.isi ISI:000232934400105 en
dc.identifier.volume 72 en
dc.identifier.issue 15 en


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