Plasma etch rate measurements of thin PMMA films and correlation with the glass transition temperature

Vourdas, N; Boudouvis, AG; Gogolides, E

dc.contributor.author	Vourdas, N	en
dc.contributor.author	Boudouvis, AG	en
dc.contributor.author	Gogolides, E	en
dc.date.accessioned	2014-03-01T01:22:56Z
dc.date.available	2014-03-01T01:22:56Z
dc.date.issued	2005	en
dc.identifier.issn	17426588	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16732
dc.subject	Glass Transition Temperature	en
dc.subject	Plasma Etching	en
dc.title	Plasma etch rate measurements of thin PMMA films and correlation with the glass transition temperature	en
heal.type	journalArticle	en
heal.identifier.primary	10.1088/1742-6596/10/1/099	en
heal.identifier.secondary	http://dx.doi.org/10.1088/1742-6596/10/1/099	en
heal.publicationDate	2005	en
heal.abstract	Plasma etch rate (ER) measurements (via in situ spectroscopic ellipsometry) of thin PMMA (poly methyl-methacrylate) films, in an inductively coupled plasma (ICP) reactor are presented. It is shown that plasma ER decreases as the initial polymeric thickness decreases, indicating an increased plasma etch resistance of thin PMMA films. An ER-Tg (glass transition temperature) correlation, reveals a clear inverse relation, namely that the ER decreases when the Tg increases. © 2005 IOP Publishing Ltd.	en
heal.journalName	Journal of Physics: Conference Series	en
dc.identifier.doi	10.1088/1742-6596/10/1/099	en
dc.identifier.volume	10	en
dc.identifier.issue	1	en
dc.identifier.spage	405	en
dc.identifier.epage	408	en