Raman tensor and selection rules for a chemical vapor transport-grown chalcopyrite single crystal

Zhang, W; Sang, S; Xue, C; Papadimitriou, D

dc.contributor.author	Zhang, W	en
dc.contributor.author	Sang, S	en
dc.contributor.author	Xue, C	en
dc.contributor.author	Papadimitriou, D	en
dc.date.accessioned	2014-03-01T01:23:00Z
dc.date.available	2014-03-01T01:23:00Z
dc.date.issued	2005	en
dc.identifier.issn	0377-0486	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16762
dc.subject	Chalcopyrite	en
dc.subject	Chemical vapor transport	en
dc.subject	CuGaSe2	en
dc.subject	Raman selection rules	en
dc.subject	Raman tensor	en
dc.subject.classification	Spectroscopy	en
dc.subject.other	SCATTERING	en
dc.subject.other	SPECTRA	en
dc.title	Raman tensor and selection rules for a chemical vapor transport-grown chalcopyrite single crystal	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/jrs.1360	en
heal.identifier.secondary	http://dx.doi.org/10.1002/jrs.1360	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	This paper reports on the Raman tensor and selection rules of a chemical vapor transport (CVT)-grown CuGaSe2 single crystal. CVT-CuGaSe2 has a hollow needle-like shape with two flat faces of unequal area, (110) and (112), which involve different systems of coordinates. In order to study the Raman spectra of these systems, we probed the theory of Raman tensors and Raman selection rules. Using the MATLAB program, we calculated the Raman tensor of CuGaSe2 (D-2d) and other point groups in different orthogonal systems. In addition, by applying the selection rules for Raman scattering to the observation of phonon modes from the (110) and (112) faces of CuGaSe2, we were able to assign the Raman modes at 187, 84 and 68 cm(-1), which were in accord with the literature. Additionally, we found some new Raman modes. Copyright (c) 2005 John Wiley & Sons, Ltd.	en
heal.publisher	JOHN WILEY & SONS LTD	en
heal.journalName	Journal of Raman Spectroscopy	en
dc.identifier.doi	10.1002/jrs.1360	en
dc.identifier.isi	ISI:000231319300005	en
dc.identifier.volume	36	en
dc.identifier.issue	8	en
dc.identifier.spage	777	en
dc.identifier.epage	784	en