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Structural and electrical properties of undoped SnO2 films developed by a low cost CVD technique with two different methods: Comparative study

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dc.contributor.author Papadopoulos, ND en
dc.contributor.author Tsakiridis, PE en
dc.contributor.author Hristoforou, E en
dc.date.accessioned 2014-03-01T01:23:08Z
dc.date.available 2014-03-01T01:23:08Z
dc.date.issued 2005 en
dc.identifier.issn 1454-4164 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/16827
dc.relation.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-27844504720&partnerID=40&md5=6235344bdf64d18a55b026893e0e6e07 en
dc.subject Characterization en
dc.subject CVD en
dc.subject Oxidizer en
dc.subject Thin films en
dc.subject Tin oxide en
dc.subject.classification Materials Science, Multidisciplinary en
dc.subject.classification Optics en
dc.subject.classification Physics, Applied en
dc.subject.other CHEMICAL-VAPOR-DEPOSITION en
dc.subject.other OXIDE THIN-FILMS en
dc.subject.other TIN OXIDE en
dc.subject.other OPTICAL-PROPERTIES en
dc.subject.other SOLAR-CELLS en
dc.subject.other COATINGS en
dc.subject.other GLASS en
dc.title Structural and electrical properties of undoped SnO2 films developed by a low cost CVD technique with two different methods: Comparative study en
heal.type journalArticle en
heal.language English en
heal.publicationDate 2005 en
heal.abstract Uniform, conductive SnO2 thin films have been developed by a low - cost CVD technique using a simple, home-made setup. Two methods with different sources of oxygen were applied. The thin layers were deposited on glass substrates. Stannic chloride was used as the precursor and the substrate temperature varied from 485 to 545 degrees C. The microstructure and the surface morphology of the produced films were examined by X-Ray Diffraction and scanning electron microscopy, with EDAX analysis. The films were found to be polycrystalline, presenting a preferred orientation along the (110) plane. Thickness of films varied from 150 nm to 400 nm. Extended study of the mechanism of diffusion of sodium ions out of the glass as well as its effects on film's quality was carried. Crystals of NaCl formed on the matrix of films, which had been grown with air functioning as the oxidizer. Measurements of the mean surface's roughness were conducted by a profilometer. When pure oxygen was used, the produced films presented a smoother surface without ally pinholes or undesirable crystal formation. Electrical resistivity at room temperature and in the range from 25 to 250 degrees C was also measured. Films of high conductivity were obtained for both methods at deposition temperatures between 515 and 545 degrees C. For films of high crystallinity grain scattering and scattering from ionised impurities are the major factors influencing conductivity. When air is used as the oxidizer, films develop fully at higher deposition temperatures. In this case however, oxidation diminishes vacancies, which are present at a high degree since the oxygen concentration in air is low. In both methods, annealing in air improved the Film crystallinity and conductivity. en
heal.publisher NATL INST OPTOELECTRONICS en
heal.journalName Journal of Optoelectronics and Advanced Materials en
dc.identifier.isi ISI:000232894100070 en
dc.identifier.volume 7 en
dc.identifier.issue 5 en
dc.identifier.spage 2693 en
dc.identifier.epage 2706 en


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