Structural and electrical properties of undoped SnO2 films developed by a low cost CVD technique with two different methods: Comparative study

Papadopoulos, ND; Tsakiridis, PE; Hristoforou, E

dc.contributor.author	Papadopoulos, ND	en
dc.contributor.author	Tsakiridis, PE	en
dc.contributor.author	Hristoforou, E	en
dc.date.accessioned	2014-03-01T01:23:08Z
dc.date.available	2014-03-01T01:23:08Z
dc.date.issued	2005	en
dc.identifier.issn	1454-4164	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16827
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-27844504720&partnerID=40&md5=6235344bdf64d18a55b026893e0e6e07	en
dc.subject	Characterization	en
dc.subject	CVD	en
dc.subject	Oxidizer	en
dc.subject	Thin films	en
dc.subject	Tin oxide	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	CHEMICAL-VAPOR-DEPOSITION	en
dc.subject.other	OXIDE THIN-FILMS	en
dc.subject.other	TIN OXIDE	en
dc.subject.other	OPTICAL-PROPERTIES	en
dc.subject.other	SOLAR-CELLS	en
dc.subject.other	COATINGS	en
dc.subject.other	GLASS	en
dc.title	Structural and electrical properties of undoped SnO2 films developed by a low cost CVD technique with two different methods: Comparative study	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	Uniform, conductive SnO2 thin films have been developed by a low - cost CVD technique using a simple, home-made setup. Two methods with different sources of oxygen were applied. The thin layers were deposited on glass substrates. Stannic chloride was used as the precursor and the substrate temperature varied from 485 to 545 degrees C. The microstructure and the surface morphology of the produced films were examined by X-Ray Diffraction and scanning electron microscopy, with EDAX analysis. The films were found to be polycrystalline, presenting a preferred orientation along the (110) plane. Thickness of films varied from 150 nm to 400 nm. Extended study of the mechanism of diffusion of sodium ions out of the glass as well as its effects on film's quality was carried. Crystals of NaCl formed on the matrix of films, which had been grown with air functioning as the oxidizer. Measurements of the mean surface's roughness were conducted by a profilometer. When pure oxygen was used, the produced films presented a smoother surface without ally pinholes or undesirable crystal formation. Electrical resistivity at room temperature and in the range from 25 to 250 degrees C was also measured. Films of high conductivity were obtained for both methods at deposition temperatures between 515 and 545 degrees C. For films of high crystallinity grain scattering and scattering from ionised impurities are the major factors influencing conductivity. When air is used as the oxidizer, films develop fully at higher deposition temperatures. In this case however, oxidation diminishes vacancies, which are present at a high degree since the oxygen concentration in air is low. In both methods, annealing in air improved the Film crystallinity and conductivity.	en
heal.publisher	NATL INST OPTOELECTRONICS	en
heal.journalName	Journal of Optoelectronics and Advanced Materials	en
dc.identifier.isi	ISI:000232894100070	en
dc.identifier.volume	7	en
dc.identifier.issue	5	en
dc.identifier.spage	2693	en
dc.identifier.epage	2706	en