dc.contributor.author |
Vasilopoulos, A |
en |
dc.contributor.author |
Vitzilaios, G |
en |
dc.contributor.author |
Theodoratos, G |
en |
dc.contributor.author |
Papananos, Y |
en |
dc.date.accessioned |
2014-03-01T01:23:25Z |
|
dc.date.available |
2014-03-01T01:23:25Z |
|
dc.date.issued |
2006 |
en |
dc.identifier.issn |
0018-9200 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/16955 |
|
dc.subject |
Active-RC filter |
en |
dc.subject |
Compensation technique |
en |
dc.subject |
Low power |
en |
dc.subject |
Operational amplifiers |
en |
dc.subject |
Programmable resistor arrays |
en |
dc.subject |
Tuning circuit |
en |
dc.subject.classification |
Engineering, Electrical & Electronic |
en |
dc.subject.other |
Active-RC filter |
en |
dc.subject.other |
Compensation technique |
en |
dc.subject.other |
Low power |
en |
dc.subject.other |
Programmable resistor arrays |
en |
dc.subject.other |
Tuning circuit |
en |
dc.subject.other |
Bandwidth |
en |
dc.subject.other |
Electric currents |
en |
dc.subject.other |
Operational amplifiers |
en |
dc.subject.other |
Polysilicon |
en |
dc.subject.other |
Resistors |
en |
dc.subject.other |
Tuning |
en |
dc.subject.other |
Electric filters |
en |
dc.title |
A low-power wideband reconfigurable integrated active-RC filter with 73 dB SFDR |
en |
heal.type |
journalArticle |
en |
heal.identifier.primary |
10.1109/JSSC.2006.880616 |
en |
heal.identifier.secondary |
http://dx.doi.org/10.1109/JSSC.2006.880616 |
en |
heal.identifier.secondary |
1683891 |
en |
heal.language |
English |
en |
heal.publicationDate |
2006 |
en |
heal.abstract |
In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a reconfigurable transfer function (Chebyshev, Elliptic) and bandwidth (5 MHz, 10 MHz), is presented. The filter exploits digitally-controlled polysilicon resistor banks and a digital automatic tuning scheme to account for process and temperature variations. The operational amplifiers used are based on a new compensation technique that allows optimized high-frequency filter performance and minimized current consumption. A filter prototype has been fabricated in a 0.12-μm CMOS process, occupies 0.25 mm2 (tuning circuit included), and achieves an IIP3 of approximately +20 dBm, whereas its spurious free dynamic range (SFDR) reaches 73 dB. The dissipation of the filter core and the tuning circuit is 4.6 mW and 1.5 mW, respectively. © 2006 IEEE. |
en |
heal.publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
en |
heal.journalName |
IEEE Journal of Solid-State Circuits |
en |
dc.identifier.doi |
10.1109/JSSC.2006.880616 |
en |
dc.identifier.isi |
ISI:000240077100004 |
en |
dc.identifier.volume |
41 |
en |
dc.identifier.issue |
9 |
en |
dc.identifier.spage |
1997 |
en |
dc.identifier.epage |
2008 |
en |