Capacitive pressure sensors and switches fabricated using strain compensated SiGeB

Chatzandroulis, S; Koliopoulou, S; Goustouridis, D; Tsoukalas, D

dc.contributor.author	Chatzandroulis, S	en
dc.contributor.author	Koliopoulou, S	en
dc.contributor.author	Goustouridis, D	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:23:41Z
dc.date.available	2014-03-01T01:23:41Z
dc.date.issued	2006	en
dc.identifier.issn	0167-9317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17090
dc.subject	Capacitive sensor	en
dc.subject	Pressure sensor	en
dc.subject	Pressure switch	en
dc.subject	Silicon germanium	en
dc.subject	Strain compensation	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Automotive engineering	en
dc.subject.other	Diaphragms	en
dc.subject.other	Germanium compounds	en
dc.subject.other	Silicon compounds	en
dc.subject.other	Silicon wafers	en
dc.subject.other	Switches	en
dc.subject.other	Capacitive sensor	en
dc.subject.other	Pressure sensor	en
dc.subject.other	Pressure switch	en
dc.subject.other	Silicon germanium	en
dc.subject.other	Strain compensation	en
dc.subject.other	Sensors	en
dc.title	Capacitive pressure sensors and switches fabricated using strain compensated SiGeB	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mee.2006.01.048	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2006.01.048	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	The fabrication of capacitive pressure sensors and pressure switches using a 2.4 mu m thick strain compensated heavily boron doped SiGeB diaphragm is presented. The process relies on the silicon fusion bonding of two silicon wafers to seal the pressure sensor cavity and construct the device. Both rectangular and circular type pressure sensors and pressure switches have successfully been fabricated using this process. Results are presented of a capacitive type sensor operating in the medical pressure regime (0-300 mmHg) with a sensitivity to pressure of 1.5 fF/mmHg or 305 ppm/mmHg, and of a pressure switch operating in the 3-8 bar pressure range and are thus suitable for a number of industrial and automotive applications. The current flowing through the switch when biased at 2 V jumps over six orders of magnitude when its two plates come in contact at a well defined pressure threshold. (c) 2006 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE BV	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2006.01.048	en
dc.identifier.isi	ISI:000237581900139	en
dc.identifier.volume	83	en
dc.identifier.issue	4-9 SPEC. ISS.	en
dc.identifier.spage	1209	en
dc.identifier.epage	1211	en