Laser annealing for n+/p junction formation in germanium

Tsouroutas, P; Tsoukalas, D; Florakis, A; Zergioti, I; Serafetinides, AA; Cherkashin, N; Marty, B; Claverie, A

dc.contributor.author	Tsouroutas, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Florakis, A	en
dc.contributor.author	Zergioti, I	en
dc.contributor.author	Serafetinides, AA	en
dc.contributor.author	Cherkashin, N	en
dc.contributor.author	Marty, B	en
dc.contributor.author	Claverie, A	en
dc.date.accessioned	2014-03-01T01:24:33Z
dc.date.available	2014-03-01T01:24:33Z
dc.date.issued	2006	en
dc.identifier.issn	1369-8001	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17329
dc.subject	Germanium	en
dc.subject	Laser annealing	en
dc.subject	n+/p junction	en
dc.subject	Recrystallization	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Annealing	en
dc.subject.other	Germanium	en
dc.subject.other	Laser applications	en
dc.subject.other	Neodymium	en
dc.subject.other	Recrystallization (metallurgy)	en
dc.subject.other	Semiconductor doping	en
dc.subject.other	Substrates	en
dc.subject.other	Transmission electron microscopy	en
dc.subject.other	Dopant diffusion	en
dc.subject.other	Dopants	en
dc.subject.other	Laser annealing	en
dc.subject.other	Semiconductor junctions	en
dc.title	Laser annealing for n+/p junction formation in germanium	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.mssp.2006.08.013	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mssp.2006.08.013	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	In the present work we focus our study on laser annealing of implanted with high phosphorus dose p-type germanium wafers using an Nd-YAG laser at 355 nm. Dopant profiles as monitored by SIMS measurements demonstrate dopant profile movement less than 15 nm at junction depth. Germanium (Ge) structural defects were observed by TEM measurements and the roughness of the surface was measured by AFM. The above analysis shows the efficiency of laser annealing in recrystallizing the Ge substrates at lower energy fluences compared to Si and without substantial dopant loss and diffusion. (C) 2006 Elsevier Ltd. All rights reserved.	en
heal.publisher	ELSEVIER SCI LTD	en
heal.journalName	Materials Science in Semiconductor Processing	en
dc.identifier.doi	10.1016/j.mssp.2006.08.013	en
dc.identifier.isi	ISI:000243574100041	en
dc.identifier.volume	9	en
dc.identifier.issue	4-5 SPEC. ISS.	en
dc.identifier.spage	644	en
dc.identifier.epage	649	en