Magnetic and structural characterization of Fe-Ni films for high precision field sensing

Petrou, J; Diplas, S; Chiriac, H; Hristoforou, E

dc.contributor.author	Petrou, J	en
dc.contributor.author	Diplas, S	en
dc.contributor.author	Chiriac, H	en
dc.contributor.author	Hristoforou, E	en
dc.date.accessioned	2014-03-01T01:24:34Z
dc.date.available	2014-03-01T01:24:34Z
dc.date.issued	2006	en
dc.identifier.issn	1454-4164	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17339
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-33750594091&partnerID=40&md5=724dda1075b790cbe867e5d2de88eee8	en
dc.subject	AMR	en
dc.subject	Magnetic field sensor	en
dc.subject	Magnetoresistor	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Optics	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	THIN-FILM	en
dc.subject.other	SENSOR	en
dc.subject.other	MAGNETOIMPEDANCE	en
dc.subject.other	WIRES	en
dc.title	Magnetic and structural characterization of Fe-Ni films for high precision field sensing	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	In this paper, results are presented concerning structural and magnetic characterization of magnetic field sensing core Fe-Ni films utilizing super-paramagnetic-like rotation of magnetization on the film plane in order to minimize the magnetic noise and improve the system sensitivity. The rotating vector of magnetization was realized by transmitting sinusoidal and cosine fields on the film plane, having amplitude much larger than the anisotropy field of the film. Kerr microscopy studies and magnetoresistive measurements have been realized allowing the evaluation of the developed sensing cores. Furthermore XPS analysis helped in correlating the surface structure with the properties of the developed materials. In this way, the selected sensing cores have been tested with respect to the, applied field, illustrating acceptable levels of sensitivity and noise. Such an arrangement can be considered as promising for the development of new types of high precision monolithic CMOS compatible field sensors.	en
heal.publisher	NATL INST OPTOELECTRONICS	en
heal.journalName	Journal of Optoelectronics and Advanced Materials	en
dc.identifier.isi	ISI:000241473000013	en
dc.identifier.volume	8	en
dc.identifier.issue	5	en
dc.identifier.spage	1715	en
dc.identifier.epage	1719	en