Raman and photoreflectance study of CuIn1 - xGaxSe2 epitaxial layers

Theodoropoulou, S; Papadimitriou, D; Rega, N; Siebentritt, S; Lux-Steiner, MCh

dc.contributor.author	Theodoropoulou, S	en
dc.contributor.author	Papadimitriou, D	en
dc.contributor.author	Rega, N	en
dc.contributor.author	Siebentritt, S	en
dc.contributor.author	Lux-Steiner, MCh	en
dc.date.accessioned	2014-03-01T01:25:01Z
dc.date.available	2014-03-01T01:25:01Z
dc.date.issued	2006	en
dc.identifier.issn	0040-6090	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17512
dc.subject	Band gap energy (RT and LT)	en
dc.subject	CuIn1 - xGaxSe2	en
dc.subject	Photoreflectance	en
dc.subject	Raman	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Electric excitation	en
dc.subject.other	Epitaxial growth	en
dc.subject.other	Optical properties	en
dc.subject.other	Phonons	en
dc.subject.other	Raman spectroscopy	en
dc.subject.other	Selenium	en
dc.subject.other	Spectroscopic analysis	en
dc.subject.other	Thermal effects	en
dc.subject.other	Band gap energy	en
dc.subject.other	Band gap energy (RT and LT)	en
dc.subject.other	CuIn1 - xGaxSe2	en
dc.subject.other	Photoreflectance	en
dc.subject.other	Gallium compounds	en
dc.title	Raman and photoreflectance study of CuIn1 - xGaxSe2 epitaxial layers	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.tsf.2005.11.064	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.tsf.2005.11.064	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	The structural and optical properties of CuIn1-xGaxSe2 epitaxial layers were studied in dependence of composition by Photoreflectance (PR) spectroscopy at room and low temperatures and by Raman spectroscopy at room temperature. For compositions with [Ga]/([In]+[Ga]) varying between 0.08 and 0.82, the band gap, determined by fitting the PR-spectra with a third derivative functional form, shows a quadratic dependence on composition. The Raman spectra, recorded under excitation with a vertically polarized Kr+-laser beam operated at the 647.1 nm line in the region 50-700 cm(-1), consist mainly of peaks assigned to the A(1)- and B-2-phonon modes. The A(1)-mode dominates the spectra and shifts linearly, with the increase of the [Ga]/([In]+[Ga]) content, from 172 cm(-1) (A(1)-mode frequency of CuInSe2) to 181 cm(-1) (A,-mode frequency of CuGaSe2). Combining the Raman and PR-data, an analytical expression has been derived which correlates the band gap energy with the A(1) Raman mode frequency for a given composition of the quaternary compound. (c) 2005 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Thin Solid Films	en
dc.identifier.doi	10.1016/j.tsf.2005.11.064	en
dc.identifier.isi	ISI:000238249000132	en
dc.identifier.volume	511-512	en
dc.identifier.spage	690	en
dc.identifier.epage	694	en