RF operation of MOSFETs under integrated inductors

Nastos, N; Papananos, Y

dc.contributor.author	Nastos, N	en
dc.contributor.author	Papananos, Y	en
dc.date.accessioned	2014-03-01T01:25:05Z
dc.date.available	2014-03-01T01:25:05Z
dc.date.issued	2006	en
dc.identifier.issn	0018-9480	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17536
dc.subject	Electromagnetic (EM) interference	en
dc.subject	Integrated inductors	en
dc.subject	MOSFET-inductor interference	en
dc.subject	Three-dimensional (3-D) analog integrated circuits (ICs)	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.other	Electromagnetic (EM) interferences	en
dc.subject.other	Integrated inductors	en
dc.subject.other	MOSFET-inductor interferences	en
dc.subject.other	Three-dimensional (3-D) analog integrated circuits	en
dc.subject.other	CMOS integrated circuits	en
dc.subject.other	Electric inductors	en
dc.subject.other	Integrated circuits	en
dc.subject.other	Measurements	en
dc.subject.other	Three dimensional	en
dc.subject.other	Transistors	en
dc.subject.other	MOSFET devices	en
dc.title	RF operation of MOSFETs under integrated inductors	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TMTT.2006.872791	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TMTT.2006.872791	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	This paper presents an in-depth analysis of the operation of a CMOS single-chip three-dimensional inductor over a MOSFET structure at RF frequencies. Active circuitry is placed underneath the integrated inductors in order to take advantage of the vacant space. Measurements indicate that the operation of the MOSFET and of the inductor is affected in a predictable manner. The paper theoretically investigates the interaction between the two elements, analyzes the origin of all appearing effects and compares the theory with the experimental data from a typical CMOS process. Moreover, this study proposes possible applications and design guides and confirms the attractiveness of the inductor over MOSFET placement. © 2006 IEEE.	en
heal.publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC	en
heal.journalName	IEEE Transactions on Microwave Theory and Techniques	en
dc.identifier.doi	10.1109/TMTT.2006.872791	en
dc.identifier.isi	ISI:000237602700021	en
dc.identifier.volume	54	en
dc.identifier.issue	5	en
dc.identifier.spage	2106	en
dc.identifier.epage	2117	en