Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

Pandis, Ch; Brilis, N; Tsamakis, D; Ali, HA; Krishnamoorthy, S; Iliadis, AA

dc.contributor.author	Pandis, Ch	en
dc.contributor.author	Brilis, N	en
dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Ali, HA	en
dc.contributor.author	Krishnamoorthy, S	en
dc.contributor.author	Iliadis, AA	en
dc.date.accessioned	2014-03-01T01:25:06Z
dc.date.available	2014-03-01T01:25:06Z
dc.date.issued	2006	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17542
dc.subject	Hydrogen effect	en
dc.subject	Native defects	en
dc.subject	P-type ZnO	en
dc.subject	PLD	en
dc.subject	Undoped	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Electric conductivity	en
dc.subject.other	Electric properties	en
dc.subject.other	Oxides	en
dc.subject.other	Pressure effects	en
dc.subject.other	Silicon	en
dc.subject.other	Substrates	en
dc.subject.other	Thermal conductivity	en
dc.subject.other	Thin films	en
dc.subject.other	Hydrogen effects	en
dc.subject.other	Native defects	en
dc.subject.other	P-type ZnO	en
dc.subject.other	Undoped	en
dc.subject.other	Pulsed laser deposition	en
dc.title	Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.sse.2006.04.025	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2006.04.025	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O-2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O-2 partial pressure is reduced from 10(-4) to 10(-7) Torr at growth temperatures lower than 400 degrees C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O-2 pressures. (c) 2006 Elsevier Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/j.sse.2006.04.025	en
dc.identifier.isi	ISI:000239499400035	en
dc.identifier.volume	50	en
dc.identifier.issue	6	en
dc.identifier.spage	1119	en
dc.identifier.epage	1123	en