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Silicon electron emitters fabricated by ultraviolet laser pulses

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dc.contributor.author Zorba, V en
dc.contributor.author Tzanetakis, P en
dc.contributor.author Fotakis, C en
dc.contributor.author Spanakis, E en
dc.contributor.author Stratakis, E en
dc.contributor.author Papazoglou, DG en
dc.contributor.author Zergioti, I en
dc.date.accessioned 2014-03-01T01:25:09Z
dc.date.available 2014-03-01T01:25:09Z
dc.date.issued 2006 en
dc.identifier.issn 0003-6951 en
dc.identifier.uri https://dspace.lib.ntua.gr/xmlui/handle/123456789/17560
dc.subject.classification Physics, Applied en
dc.subject.other Microspike arrays en
dc.subject.other Pulse duration en
dc.subject.other Silicon electron emitters en
dc.subject.other Ultraviolet laser pulses en
dc.subject.other Electron beams en
dc.subject.other Field emission cathodes en
dc.subject.other Light emission en
dc.subject.other Silicon en
dc.subject.other Ultraviolet radiation en
dc.subject.other Laser pulses en
dc.title Silicon electron emitters fabricated by ultraviolet laser pulses en
heal.type journalArticle en
heal.identifier.primary 10.1063/1.2177653 en
heal.identifier.secondary http://dx.doi.org/10.1063/1.2177653 en
heal.identifier.secondary 081103 en
heal.language English en
heal.publicationDate 2006 en
heal.abstract In this letter we consider the effect of laser pulse duration on the surface morphology and the field emission properties of silicon structured by UV laser pulses. In three different pulse duration regimes ranging from sub-ps to ns, we altered the morphology of the fabricated silicon microspike arrays. The field emission properties of the microspike arrays were influenced by the morphological changes exhibiting a reduction of the emission threshold field to 2.5 V/mu m for 15 ns laser pulses. The ability of tuning the field emission properties of laser-fabricated silicon microspike arrays makes them excellent candidates for use as field emission cathodes. (c) 2006 American Institute of Physics. en
heal.publisher AMER INST PHYSICS en
heal.journalName Applied Physics Letters en
dc.identifier.doi 10.1063/1.2177653 en
dc.identifier.isi ISI:000235553300003 en
dc.identifier.volume 88 en
dc.identifier.issue 8 en


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