Silicon electron emitters fabricated by ultraviolet laser pulses

Zorba, V; Tzanetakis, P; Fotakis, C; Spanakis, E; Stratakis, E; Papazoglou, DG; Zergioti, I

dc.contributor.author	Zorba, V	en
dc.contributor.author	Tzanetakis, P	en
dc.contributor.author	Fotakis, C	en
dc.contributor.author	Spanakis, E	en
dc.contributor.author	Stratakis, E	en
dc.contributor.author	Papazoglou, DG	en
dc.contributor.author	Zergioti, I	en
dc.date.accessioned	2014-03-01T01:25:09Z
dc.date.available	2014-03-01T01:25:09Z
dc.date.issued	2006	en
dc.identifier.issn	0003-6951	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/17560
dc.subject.classification	Physics, Applied	en
dc.subject.other	Microspike arrays	en
dc.subject.other	Pulse duration	en
dc.subject.other	Silicon electron emitters	en
dc.subject.other	Ultraviolet laser pulses	en
dc.subject.other	Electron beams	en
dc.subject.other	Field emission cathodes	en
dc.subject.other	Light emission	en
dc.subject.other	Silicon	en
dc.subject.other	Ultraviolet radiation	en
dc.subject.other	Laser pulses	en
dc.title	Silicon electron emitters fabricated by ultraviolet laser pulses	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.2177653	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.2177653	en
heal.identifier.secondary	081103	en
heal.language	English	en
heal.publicationDate	2006	en
heal.abstract	In this letter we consider the effect of laser pulse duration on the surface morphology and the field emission properties of silicon structured by UV laser pulses. In three different pulse duration regimes ranging from sub-ps to ns, we altered the morphology of the fabricated silicon microspike arrays. The field emission properties of the microspike arrays were influenced by the morphological changes exhibiting a reduction of the emission threshold field to 2.5 V/mu m for 15 ns laser pulses. The ability of tuning the field emission properties of laser-fabricated silicon microspike arrays makes them excellent candidates for use as field emission cathodes. (c) 2006 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Applied Physics Letters	en
dc.identifier.doi	10.1063/1.2177653	en
dc.identifier.isi	ISI:000235553300003	en
dc.identifier.volume	88	en
dc.identifier.issue	8	en